Comparison of conventional and cascode drive of SiC BJTs

This study compares simple conventional and cascode driver circuits for the SiC bipolar junction transistor (BJT). A low-voltage silicon metal-oxide-semiconductor field-effect transistor is used in the emitter of the BJT to realise the cascode variant. The circuits are experimentally evaluated when...

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Bibliographic Details
Main Authors:	Neville McNeill, Mark A. H. Broadmeadow, Nina Roscoe, Stephen Finney
Format:	Article
Language:	English
Published:	Wiley 2019-04-01
Series:	The Journal of Engineering
Subjects:	driver circuits silicon compounds wide band gap semiconductors bipolar transistor circuits MOSFET circuits SiC voltage 600.0 V current 2.5 A buck converter bipolar junction transistor cascode variant low-voltage silicon metal-oxide-semiconductor field-effect transistor BJT cascode driver circuits simple conventional driver circuits
Online Access:	https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8034

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spelling	doaj-9fcd68ee5cfc40279d0291570e85c6f62021-04-02T06:49:08ZengWileyThe Journal of Engineering2051-33052019-04-0110.1049/joe.2018.8034JOE.2018.8034Comparison of conventional and cascode drive of SiC BJTsNeville McNeill0Mark A. H. Broadmeadow1Nina Roscoe2Stephen Finney3University of StrathclydeQueensland University of Technology (QUT)University of StrathclydeUniversity of EdinburghThis study compares simple conventional and cascode driver circuits for the SiC bipolar junction transistor (BJT). A low-voltage silicon metal-oxide-semiconductor field-effect transistor is used in the emitter of the BJT to realise the cascode variant. The circuits are experimentally evaluated when switching a current of 2.5 A and a voltage of 600 V in a buck converter.https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8034driver circuitssilicon compoundswide band gap semiconductorsbipolar transistor circuitsMOSFET circuitsSiCvoltage 600.0 Vcurrent 2.5 Abuck converterbipolar junction transistorcascode variantlow-voltage silicon metal-oxide-semiconductor field-effect transistorBJTcascode driver circuitssimple conventional driver circuits
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Neville McNeill Mark A. H. Broadmeadow Nina Roscoe Stephen Finney
spellingShingle	Neville McNeill Mark A. H. Broadmeadow Nina Roscoe Stephen Finney Comparison of conventional and cascode drive of SiC BJTs The Journal of Engineering driver circuits silicon compounds wide band gap semiconductors bipolar transistor circuits MOSFET circuits SiC voltage 600.0 V current 2.5 A buck converter bipolar junction transistor cascode variant low-voltage silicon metal-oxide-semiconductor field-effect transistor BJT cascode driver circuits simple conventional driver circuits
author_facet	Neville McNeill Mark A. H. Broadmeadow Nina Roscoe Stephen Finney
author_sort	Neville McNeill
title	Comparison of conventional and cascode drive of SiC BJTs
title_short	Comparison of conventional and cascode drive of SiC BJTs
title_full	Comparison of conventional and cascode drive of SiC BJTs
title_fullStr	Comparison of conventional and cascode drive of SiC BJTs
title_full_unstemmed	Comparison of conventional and cascode drive of SiC BJTs
title_sort	comparison of conventional and cascode drive of sic bjts
publisher	Wiley
series	The Journal of Engineering
issn	2051-3305
publishDate	2019-04-01
description	This study compares simple conventional and cascode driver circuits for the SiC bipolar junction transistor (BJT). A low-voltage silicon metal-oxide-semiconductor field-effect transistor is used in the emitter of the BJT to realise the cascode variant. The circuits are experimentally evaluated when switching a current of 2.5 A and a voltage of 600 V in a buck converter.
topic	driver circuits silicon compounds wide band gap semiconductors bipolar transistor circuits MOSFET circuits SiC voltage 600.0 V current 2.5 A buck converter bipolar junction transistor cascode variant low-voltage silicon metal-oxide-semiconductor field-effect transistor BJT cascode driver circuits simple conventional driver circuits
url	https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8034
work_keys_str_mv	AT nevillemcneill comparisonofconventionalandcascodedriveofsicbjts AT markahbroadmeadow comparisonofconventionalandcascodedriveofsicbjts AT ninaroscoe comparisonofconventionalandcascodedriveofsicbjts AT stephenfinney comparisonofconventionalandcascodedriveofsicbjts
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Comparison of conventional and cascode drive of SiC BJTs

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