Charge Transport and Thermo-emf in TlFe1−xGaxS2 Solid Solutions
TlFe1−xGaxS2 solid solutions have been prepared by direct elemental synthesis. The dependences of the thermoelectric properties and DC conductivity on temperature have been studied in TlFe1−xGaxS2 solid solutions. In terms of hopping mechanism of charge transfer, the parameters of localized states i...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
Hindawi Limited
2019-01-01
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Series: | Advances in Materials Science and Engineering |
Online Access: | http://dx.doi.org/10.1155/2019/9285359 |
Summary: | TlFe1−xGaxS2 solid solutions have been prepared by direct elemental synthesis. The dependences of the thermoelectric properties and DC conductivity on temperature have been studied in TlFe1−xGaxS2 solid solutions. In terms of hopping mechanism of charge transfer, the parameters of localized states in the forbidden gap of TlFe1−xGaxS2 have been evaluated. The type of conductivity has been determined from the temperature dependences of thermoelectric power of TlFe1−xGaxS2 solid solutions. |
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ISSN: | 1687-8434 1687-8442 |