Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition

Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition

Abstract In this work, Ru-based RRAM devices with atomic layer deposited AlOy/HfOx functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of...

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Bibliographic Details
Main Authors: Yulin Feng, Peng Huang, Zheng Zhou, Xiangxiang Ding, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang
Format: Article
Language:English
Published: SpringerOpen 2019-03-01
Series:Nanoscale Research Letters
Subjects:
Negative differential resistance
Ruthenium
RRAM
Atomic layer deposition
Online Access:http://link.springer.com/article/10.1186/s11671-019-2885-2

Internet

http://link.springer.com/article/10.1186/s11671-019-2885-2

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