Multi-<inline-formula> <tex-math notation="LaTeX">${V}_{\text{th}}$ </tex-math></inline-formula> Strategies of 7-nm node Nanosheet FETs With Limited Nanosheet Spacing

Multi-<inline-formula> <tex-math notation="LaTeX">${V}_{\text{th}}$ </tex-math></inline-formula> Strategies of 7-nm node Nanosheet FETs With Limited Nanosheet Spacing

In this paper, multi-threshold voltage (<i>V</i><sub>th</sub>) scheme of 7-nm node nanosheet FETs (NSFETs) with narrow NS spacing were successfully achieved by metal-gate work function (WF) and channel doping (<i>N</i><sub>ch</sub>) using fully calibra...

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Bibliographic Details
Main Authors: Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Rock-Hyun Baek
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
7-nm node
nanosheet FET (NSFET)
nanosheet spacing
work-function metal
multi-<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">Vth</italic>
TiN capping layer
Online Access:https://ieeexplore.ieee.org/document/8419236/

Internet

https://ieeexplore.ieee.org/document/8419236/

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