Energy band diagram of In2O3/ Si heterojunction
Crystalline In2O3 Thin films have been prepared by flash evaporation. We have studied the crystal structure of as deposited at 303K and annealed at 523K using X-ray diffraction. The Hall Effect measurements confirmed that electrons were predominant charges in the conduction process (i.e n-type).It i...
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| Format: | Article |
| Language: | Arabic |
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College of Science for Women, University of Baghdad
2011-06-01
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| Series: | Baghdad Science Journal |
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| Online Access: | http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/2550 |