Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells

Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells

Luminescence efficiency droop has been studied in AlGaN epitaxial layers and multiple quantum wells (MQWs) with different strength of carrier localization in a wide range of temperatures. It is shown that the dominant mechanism leading to droop, i.e., the efficiency reduction at high carrier densiti...

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Main Authors: J. Mickevičius, J. Jurkevičius, A. Kadys, G. Tamulaitis, M. Shur, M. Shatalov, J. Yang, R. Gaska
Format: Article
Language:English
Published: AIP Publishing LLC 2016-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4947574
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spelling doaj-9e30034d0b1b401bbe28a630cb5263ab2020-11-24T22:25:24ZengAIP Publishing LLCAIP Advances2158-32262016-04-0164045212045212-510.1063/1.4947574050604ADVTemperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wellsJ. Mickevičius0J. Jurkevičius1A. Kadys2G. Tamulaitis3M. Shur4M. Shatalov5J. Yang6R. Gaska7Semiconductor Physics Department and Institute of Applied Research, Vilnius University, Sauletekio 9-III, LT-10222, Vilnius, LithuaniaSemiconductor Physics Department and Institute of Applied Research, Vilnius University, Sauletekio 9-III, LT-10222, Vilnius, LithuaniaSemiconductor Physics Department and Institute of Applied Research, Vilnius University, Sauletekio 9-III, LT-10222, Vilnius, LithuaniaSemiconductor Physics Department and Institute of Applied Research, Vilnius University, Sauletekio 9-III, LT-10222, Vilnius, LithuaniaDepartment of ECE and CIE, Rensselaer Polytechnic Institute, Troy, NY 12180, USASensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, USASensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, USASensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, USALuminescence efficiency droop has been studied in AlGaN epitaxial layers and multiple quantum wells (MQWs) with different strength of carrier localization in a wide range of temperatures. It is shown that the dominant mechanism leading to droop, i.e., the efficiency reduction at high carrier densities, is determined by the carrier thermalization conditions and the ratio between carrier thermal energy and localization depth. The droop mechanisms, such as the occupation-enhanced redistribution of nonthermalized carriers, the enhancement of nonradiative recombination due to carrier delocalization, and excitation-enhanced carrier transport to extended defects or stimulated emission, are discussed.http://dx.doi.org/10.1063/1.4947574
collection DOAJ
language English
format Article
sources DOAJ
author J. Mickevičius
J. Jurkevičius
A. Kadys
G. Tamulaitis
M. Shur
M. Shatalov
J. Yang
R. Gaska
spellingShingle J. Mickevičius
J. Jurkevičius
A. Kadys
G. Tamulaitis
M. Shur
M. Shatalov
J. Yang
R. Gaska
Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells
AIP Advances
author_facet J. Mickevičius
J. Jurkevičius
A. Kadys
G. Tamulaitis
M. Shur
M. Shatalov
J. Yang
R. Gaska
author_sort J. Mickevičius
title Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells
title_short Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells
title_full Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells
title_fullStr Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells
title_full_unstemmed Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells
title_sort temperature-dependent efficiency droop in algan epitaxial layers and quantum wells
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2016-04-01
description Luminescence efficiency droop has been studied in AlGaN epitaxial layers and multiple quantum wells (MQWs) with different strength of carrier localization in a wide range of temperatures. It is shown that the dominant mechanism leading to droop, i.e., the efficiency reduction at high carrier densities, is determined by the carrier thermalization conditions and the ratio between carrier thermal energy and localization depth. The droop mechanisms, such as the occupation-enhanced redistribution of nonthermalized carriers, the enhancement of nonradiative recombination due to carrier delocalization, and excitation-enhanced carrier transport to extended defects or stimulated emission, are discussed.
url http://dx.doi.org/10.1063/1.4947574
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AT mshatalov temperaturedependentefficiencydroopinalganepitaxiallayersandquantumwells
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