Vanadium States in Doped Bi12SiO20
<p>We have investigated the absorption of the V doped Bi<sub>12</sub>SiO<sub>20</sub> in the spectral region 1.45-2 eV (11 696 – 16 129 cm<sup>-1</sup>). The observed absorption bands are due to the V<sup>2+</sup>, V<sup>3+</sup> and...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
Kaunas University of Technology
2015-06-01
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Series: | Medžiagotyra |
Subjects: | |
Online Access: | http://matsc.ktu.lt/index.php/MatSc/article/view/6140 |
Summary: | <p>We have investigated the absorption of the V doped Bi<sub>12</sub>SiO<sub>20</sub> in the spectral region 1.45-2 eV (11 696 – 16 129 cm<sup>-1</sup>). The observed absorption bands are due to the V<sup>2+</sup>, V<sup>3+</sup> and V<sup>4+</sup> ions in the same spectral region. These absorption bands do not contain information about the exact energy position of the vanadium levels. Therefore, we have calculated the second derivative of absorption. It is established that all vanadium ions are surrounded by distorted tetrahedral coordination in Bi<sub>12</sub>SiO<sub>20</sub> (BSO). The energy level structures of the vanadium ions in BSO are also presented. We have calculated the field parameters Dq<sub> </sub>and the Racah parameters B and C for V<sup>2+</sup> ion. We have determined the field parameters Dq, Ds and Dt for V<sup>3+</sup> ion.</p><p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.21.2.6140">http://dx.doi.org/10.5755/j01.ms.21.2.6140</a></p> |
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ISSN: | 1392-1320 2029-7289 |