Vanadium States in Doped Bi12SiO20

<p>We have investigated the absorption of the V doped Bi<sub>12</sub>SiO<sub>20</sub> in the spectral region 1.45-2 eV (11 696 – 16 129 cm<sup>-1</sup>). The observed absorption bands are due to the V<sup>2+</sup>, V<sup>3+</sup> and...

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Bibliographic Details
Main Authors: Petya Petkova, Petko VASILEV, Mustafa MUSTAFA, Ivaylo PARUSHEV
Format: Article
Language:English
Published: Kaunas University of Technology 2015-06-01
Series:Medžiagotyra
Subjects:
Online Access:http://matsc.ktu.lt/index.php/MatSc/article/view/6140
Description
Summary:<p>We have investigated the absorption of the V doped Bi<sub>12</sub>SiO<sub>20</sub> in the spectral region 1.45-2 eV (11 696 – 16 129 cm<sup>-1</sup>). The observed absorption bands are due to the V<sup>2+</sup>, V<sup>3+</sup> and V<sup>4+</sup> ions in the same spectral region. These absorption bands do not contain information about the exact energy position of the vanadium levels. Therefore, we have calculated the second derivative of absorption. It is established that all vanadium ions are surrounded by distorted tetrahedral coordination in Bi<sub>12</sub>SiO<sub>20</sub> (BSO). The energy level structures of the vanadium ions in BSO are also presented. We have calculated the field parameters Dq<sub> </sub>and the Racah parameters B and C for V<sup>2+</sup> ion. We have determined the field parameters Dq, Ds and Dt for V<sup>3+</sup> ion.</p><p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.21.2.6140">http://dx.doi.org/10.5755/j01.ms.21.2.6140</a></p>
ISSN:1392-1320
2029-7289