Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation Experiments

Monolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various comb...

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Main Authors: Joanna Jadczak, Joanna Kutrowska-Girzycka, Janina J. Schindler, Joerg Debus, Kenji Watanabe, Takashi Taniguchi, Ching-Hwa Ho, Leszek Bryja
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Materials
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Online Access:https://www.mdpi.com/1996-1944/14/2/399
id doaj-9da12ca4063549faabc20fcd3ef9e426
record_format Article
spelling doaj-9da12ca4063549faabc20fcd3ef9e4262021-01-16T00:00:53ZengMDPI AGMaterials1996-19442021-01-011439939910.3390/ma14020399Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation ExperimentsJoanna Jadczak0Joanna Kutrowska-Girzycka1Janina J. Schindler2Joerg Debus3Kenji Watanabe4Takashi Taniguchi5Ching-Hwa Ho6Leszek Bryja7Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroclaw, PolandDepartment of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroclaw, PolandExperimentelle Physik 2, Technische Universität Dortmund, 44227 Dortmund, GermanyExperimentelle Physik 2, Technische Universität Dortmund, 44227 Dortmund, GermanyNational Institute for Materials Science, Tsukuba 305-0044, Ibaraki, JapanNational Institute for Materials Science, Tsukuba 305-0044, Ibaraki, JapanGraduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, TaiwanDepartment of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroclaw, PolandMonolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various combinations of valley and spin indices using circularly polarized light, which can further be used in spintronics and valleytronics. The physical properties of van der Waals heterostructures composed of TMDs monolayers and hexagonal boron nitride (hBN) layers significantly depend on different kinds of interactions. Here, we report on observing both a strong increase in the emission intensity as well as a preservation of the helicity of the excitation light in the emission from hBN/WSe<sub>2</sub>/hBN heterostructures related to interlayer electron-phonon coupling. In combined low-temperature (<i>T</i> = 7 K) reflectivity contrast and photoluminescence excitation experiments, we find that the increase in the emission intensity is attributed to a double resonance, where the laser excitation and the combined Raman mode A′<sub>1</sub> (WSe<sub>2</sub>) + ZO (hBN) are in resonance with the excited (2s) and ground (1s) states of the A exciton in a WSe<sub>2</sub> monolayer. In reference to the 2s state, our interpretation is in contrast with previous reports, in which this state has been attributed to the hybrid exciton state existing only in the hBN-encapsulated WSe<sub>2</sub> monolayer. Moreover, we observe that the electron-phonon coupling also enhances the helicity preservation of the exciting light in the emission of all observed excitonic complexes. The highest helicity preservation of more than 60% is obtained in the emission of the neutral biexciton and negatively charged exciton (trion) in its triplet state. Additionally, to the best of our knowledge, the strongly intensified emission of the neutral biexciton XX<sup>0</sup> at double resonance condition is observed for the first time.https://www.mdpi.com/1996-1944/14/2/399transition metal dichalcogenides monolayervan der Waals heterostructuresphotoluminescence excitationreflectivityRaman scattering
collection DOAJ
language English
format Article
sources DOAJ
author Joanna Jadczak
Joanna Kutrowska-Girzycka
Janina J. Schindler
Joerg Debus
Kenji Watanabe
Takashi Taniguchi
Ching-Hwa Ho
Leszek Bryja
spellingShingle Joanna Jadczak
Joanna Kutrowska-Girzycka
Janina J. Schindler
Joerg Debus
Kenji Watanabe
Takashi Taniguchi
Ching-Hwa Ho
Leszek Bryja
Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation Experiments
Materials
transition metal dichalcogenides monolayer
van der Waals heterostructures
photoluminescence excitation
reflectivity
Raman scattering
author_facet Joanna Jadczak
Joanna Kutrowska-Girzycka
Janina J. Schindler
Joerg Debus
Kenji Watanabe
Takashi Taniguchi
Ching-Hwa Ho
Leszek Bryja
author_sort Joanna Jadczak
title Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation Experiments
title_short Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation Experiments
title_full Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation Experiments
title_fullStr Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation Experiments
title_full_unstemmed Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation Experiments
title_sort investigations of electron-electron and interlayer electron-phonon coupling in van der waals hbn/wse<sub>2</sub>/hbn heterostructures by photoluminescence excitation experiments
publisher MDPI AG
series Materials
issn 1996-1944
publishDate 2021-01-01
description Monolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various combinations of valley and spin indices using circularly polarized light, which can further be used in spintronics and valleytronics. The physical properties of van der Waals heterostructures composed of TMDs monolayers and hexagonal boron nitride (hBN) layers significantly depend on different kinds of interactions. Here, we report on observing both a strong increase in the emission intensity as well as a preservation of the helicity of the excitation light in the emission from hBN/WSe<sub>2</sub>/hBN heterostructures related to interlayer electron-phonon coupling. In combined low-temperature (<i>T</i> = 7 K) reflectivity contrast and photoluminescence excitation experiments, we find that the increase in the emission intensity is attributed to a double resonance, where the laser excitation and the combined Raman mode A′<sub>1</sub> (WSe<sub>2</sub>) + ZO (hBN) are in resonance with the excited (2s) and ground (1s) states of the A exciton in a WSe<sub>2</sub> monolayer. In reference to the 2s state, our interpretation is in contrast with previous reports, in which this state has been attributed to the hybrid exciton state existing only in the hBN-encapsulated WSe<sub>2</sub> monolayer. Moreover, we observe that the electron-phonon coupling also enhances the helicity preservation of the exciting light in the emission of all observed excitonic complexes. The highest helicity preservation of more than 60% is obtained in the emission of the neutral biexciton and negatively charged exciton (trion) in its triplet state. Additionally, to the best of our knowledge, the strongly intensified emission of the neutral biexciton XX<sup>0</sup> at double resonance condition is observed for the first time.
topic transition metal dichalcogenides monolayer
van der Waals heterostructures
photoluminescence excitation
reflectivity
Raman scattering
url https://www.mdpi.com/1996-1944/14/2/399
work_keys_str_mv AT joannajadczak investigationsofelectronelectronandinterlayerelectronphononcouplinginvanderwaalshbnwsesub2subhbnheterostructuresbyphotoluminescenceexcitationexperiments
AT joannakutrowskagirzycka investigationsofelectronelectronandinterlayerelectronphononcouplinginvanderwaalshbnwsesub2subhbnheterostructuresbyphotoluminescenceexcitationexperiments
AT janinajschindler investigationsofelectronelectronandinterlayerelectronphononcouplinginvanderwaalshbnwsesub2subhbnheterostructuresbyphotoluminescenceexcitationexperiments
AT joergdebus investigationsofelectronelectronandinterlayerelectronphononcouplinginvanderwaalshbnwsesub2subhbnheterostructuresbyphotoluminescenceexcitationexperiments
AT kenjiwatanabe investigationsofelectronelectronandinterlayerelectronphononcouplinginvanderwaalshbnwsesub2subhbnheterostructuresbyphotoluminescenceexcitationexperiments
AT takashitaniguchi investigationsofelectronelectronandinterlayerelectronphononcouplinginvanderwaalshbnwsesub2subhbnheterostructuresbyphotoluminescenceexcitationexperiments
AT chinghwaho investigationsofelectronelectronandinterlayerelectronphononcouplinginvanderwaalshbnwsesub2subhbnheterostructuresbyphotoluminescenceexcitationexperiments
AT leszekbryja investigationsofelectronelectronandinterlayerelectronphononcouplinginvanderwaalshbnwsesub2subhbnheterostructuresbyphotoluminescenceexcitationexperiments
_version_ 1724336272817782784