Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation Experiments
Monolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various comb...
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doaj-9da12ca4063549faabc20fcd3ef9e4262021-01-16T00:00:53ZengMDPI AGMaterials1996-19442021-01-011439939910.3390/ma14020399Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation ExperimentsJoanna Jadczak0Joanna Kutrowska-Girzycka1Janina J. Schindler2Joerg Debus3Kenji Watanabe4Takashi Taniguchi5Ching-Hwa Ho6Leszek Bryja7Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroclaw, PolandDepartment of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroclaw, PolandExperimentelle Physik 2, Technische Universität Dortmund, 44227 Dortmund, GermanyExperimentelle Physik 2, Technische Universität Dortmund, 44227 Dortmund, GermanyNational Institute for Materials Science, Tsukuba 305-0044, Ibaraki, JapanNational Institute for Materials Science, Tsukuba 305-0044, Ibaraki, JapanGraduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, TaiwanDepartment of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroclaw, PolandMonolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various combinations of valley and spin indices using circularly polarized light, which can further be used in spintronics and valleytronics. The physical properties of van der Waals heterostructures composed of TMDs monolayers and hexagonal boron nitride (hBN) layers significantly depend on different kinds of interactions. Here, we report on observing both a strong increase in the emission intensity as well as a preservation of the helicity of the excitation light in the emission from hBN/WSe<sub>2</sub>/hBN heterostructures related to interlayer electron-phonon coupling. In combined low-temperature (<i>T</i> = 7 K) reflectivity contrast and photoluminescence excitation experiments, we find that the increase in the emission intensity is attributed to a double resonance, where the laser excitation and the combined Raman mode A′<sub>1</sub> (WSe<sub>2</sub>) + ZO (hBN) are in resonance with the excited (2s) and ground (1s) states of the A exciton in a WSe<sub>2</sub> monolayer. In reference to the 2s state, our interpretation is in contrast with previous reports, in which this state has been attributed to the hybrid exciton state existing only in the hBN-encapsulated WSe<sub>2</sub> monolayer. Moreover, we observe that the electron-phonon coupling also enhances the helicity preservation of the exciting light in the emission of all observed excitonic complexes. The highest helicity preservation of more than 60% is obtained in the emission of the neutral biexciton and negatively charged exciton (trion) in its triplet state. Additionally, to the best of our knowledge, the strongly intensified emission of the neutral biexciton XX<sup>0</sup> at double resonance condition is observed for the first time.https://www.mdpi.com/1996-1944/14/2/399transition metal dichalcogenides monolayervan der Waals heterostructuresphotoluminescence excitationreflectivityRaman scattering |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Joanna Jadczak Joanna Kutrowska-Girzycka Janina J. Schindler Joerg Debus Kenji Watanabe Takashi Taniguchi Ching-Hwa Ho Leszek Bryja |
spellingShingle |
Joanna Jadczak Joanna Kutrowska-Girzycka Janina J. Schindler Joerg Debus Kenji Watanabe Takashi Taniguchi Ching-Hwa Ho Leszek Bryja Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation Experiments Materials transition metal dichalcogenides monolayer van der Waals heterostructures photoluminescence excitation reflectivity Raman scattering |
author_facet |
Joanna Jadczak Joanna Kutrowska-Girzycka Janina J. Schindler Joerg Debus Kenji Watanabe Takashi Taniguchi Ching-Hwa Ho Leszek Bryja |
author_sort |
Joanna Jadczak |
title |
Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation Experiments |
title_short |
Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation Experiments |
title_full |
Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation Experiments |
title_fullStr |
Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation Experiments |
title_full_unstemmed |
Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe<sub>2</sub>/hBN Heterostructures by Photoluminescence Excitation Experiments |
title_sort |
investigations of electron-electron and interlayer electron-phonon coupling in van der waals hbn/wse<sub>2</sub>/hbn heterostructures by photoluminescence excitation experiments |
publisher |
MDPI AG |
series |
Materials |
issn |
1996-1944 |
publishDate |
2021-01-01 |
description |
Monolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various combinations of valley and spin indices using circularly polarized light, which can further be used in spintronics and valleytronics. The physical properties of van der Waals heterostructures composed of TMDs monolayers and hexagonal boron nitride (hBN) layers significantly depend on different kinds of interactions. Here, we report on observing both a strong increase in the emission intensity as well as a preservation of the helicity of the excitation light in the emission from hBN/WSe<sub>2</sub>/hBN heterostructures related to interlayer electron-phonon coupling. In combined low-temperature (<i>T</i> = 7 K) reflectivity contrast and photoluminescence excitation experiments, we find that the increase in the emission intensity is attributed to a double resonance, where the laser excitation and the combined Raman mode A′<sub>1</sub> (WSe<sub>2</sub>) + ZO (hBN) are in resonance with the excited (2s) and ground (1s) states of the A exciton in a WSe<sub>2</sub> monolayer. In reference to the 2s state, our interpretation is in contrast with previous reports, in which this state has been attributed to the hybrid exciton state existing only in the hBN-encapsulated WSe<sub>2</sub> monolayer. Moreover, we observe that the electron-phonon coupling also enhances the helicity preservation of the exciting light in the emission of all observed excitonic complexes. The highest helicity preservation of more than 60% is obtained in the emission of the neutral biexciton and negatively charged exciton (trion) in its triplet state. Additionally, to the best of our knowledge, the strongly intensified emission of the neutral biexciton XX<sup>0</sup> at double resonance condition is observed for the first time. |
topic |
transition metal dichalcogenides monolayer van der Waals heterostructures photoluminescence excitation reflectivity Raman scattering |
url |
https://www.mdpi.com/1996-1944/14/2/399 |
work_keys_str_mv |
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