Sequential Processes to Produce N-TiO2 Films Through Rf Plasmas

Using as target a CpTi disk in an atmosphere of argon/oxygen and by rf plasma. First titanium dioxide (TiO2) films were obtained on silicon substrates, and subsequently, these films were doped with nitrogen (N-TiO2). In both processes, along four hours at 390°C of temperature. X-Ray diffraction and...

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Main Authors: Valencia-Alvarado R, de la Piedad-Beneitez A, López-Callejas R, Rodríguez-Méndez B G, Mercado-Cabrera A, Peña-Eguiluz R, Muñoz-Castro A E, de la Rosa-Vázquez J M
Format: Article
Language:English
Published: EDP Sciences 2016-01-01
Series:MATEC Web of Conferences
Online Access:http://dx.doi.org/10.1051/matecconf/20166706075