Revisiting the effects of Co(2)O(3) on multiscale defect structures and relevant electrical properties in ZnO varistors

Revisiting the effects of Co(2)O(3) on multiscale defect structures and relevant electrical properties in ZnO varistors

Element doping is an effective method to improve the performance of ZnO varistors. Previous studies mainly focused on the variation of microstructures and Schottky barriers. In this study, the effects of Co dopant on electrical properties are investigated from the aspect of multiscale defect structu...

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Bibliographic Details
Main Authors: Men Guo, Yao Wang, Kangning Wu, Lei Zhang, Xia Zhao, Ying Lin, Jianying Li
Format: Article
Language:English
Published: Wiley 2020-03-01
Series:High Voltage
Subjects:
grain boundaries
segregation
wide band gap semiconductors
sintering
ii-vi semiconductors
schottky barriers
zinc compounds
point defects
leakage currents
interface states
varistors
semiconductor doping
doping profiles
grain boundary segregation
multiscale defect structures
zinc oxide varistors
element doping
intrinsic point defects
heterogeneous interface
phase composition
energy dispersive spectroscopy
intergranular phase
enhanced grain resistivity
varistor blocks
defect responses
electrical properties
cobalt dopant effects
dissolving
depletion-intergranular layers
zno:co
Online Access:https://digital-library.theiet.org/content/journals/10.1049/hve.2019.0419

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