Dielectric tunable characteristics of compositional-gradient BaTi1−xSnxO3 thin films

Compositional-gradient BaTi1−xSnxO3 thin films on Pt(100)/Ti/SiO2/Si substrates are fabricated with sol–gel using spin coating. All of the structures of the prepared thin films are of single-phase crystalline perovskite with a dense and crack-free surface morphology. BTS10/15/20 thin film exhibits e...

Full description

Bibliographic Details
Main Authors: Chenjing Wu, Manwen Yao
Format: Article
Language:English
Published: World Scientific Publishing 2021-08-01
Series:Journal of Advanced Dielectrics
Subjects:
Online Access:http://www.worldscientific.com/doi/epdf/10.1142/S2010135X21500193
id doaj-9cf4828554f84aa0b714123550c564c2
record_format Article
spelling doaj-9cf4828554f84aa0b714123550c564c22021-09-09T11:55:42ZengWorld Scientific PublishingJournal of Advanced Dielectrics2010-135X2010-13682021-08-011142150019-12150019-1010.1142/S2010135X2150019310.1142/S2010135X21500193Dielectric tunable characteristics of compositional-gradient BaTi1−xSnxO3 thin filmsChenjing Wu0Manwen Yao1Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, No. 4800 Cao’an Road, Shanghai 201804, P. R. ChinaFunctional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, No. 4800 Cao’an Road, Shanghai 201804, P. R. ChinaCompositional-gradient BaTi1−xSnxO3 thin films on Pt(100)/Ti/SiO2/Si substrates are fabricated with sol–gel using spin coating. All of the structures of the prepared thin films are of single-phase crystalline perovskite with a dense and crack-free surface morphology. BTS10/15/20 thin film exhibits enhanced temperature stability in its dielectric behavior. The temperature coefficient of capacitance TCC20−150 in the temperature range from 20∘C to 150∘C is − 0.9 × 10−4/∘C and that of TCC20−(−95) in the temperature range from 20∘C to − 95∘C is − 3.8 × 10−4/∘C. Furthermore, the thin films show low leakage current density and dielectric loss. High and stable dielectric tunable performances are found in BTS10/15/20 thin films: the dielectric tunability of the thin films is around 20.1% under a bias voltage of 8 V at 1 MHz and the corresponding dielectric constant is in the range between 89 and 111, which is beneficial for impedance matching in circuits. Dielectric tunability can be obtained under a low tuning voltage, which helps ensure safety. The simulated resonant frequency of the compositional-gradient BTS thin films depends on the bias electric field, showing compositional-gradient BTS thin films could be used in electrically tunable components and devices. These properties make compositional-gradient BTS thin films a promising candidate for dielectric tuning.http://www.worldscientific.com/doi/epdf/10.1142/S2010135X21500193barium stannate titanatecompositional-gradient thin filmsdielectric tunable performancetemperature stability
collection DOAJ
language English
format Article
sources DOAJ
author Chenjing Wu
Manwen Yao
spellingShingle Chenjing Wu
Manwen Yao
Dielectric tunable characteristics of compositional-gradient BaTi1−xSnxO3 thin films
Journal of Advanced Dielectrics
barium stannate titanate
compositional-gradient thin films
dielectric tunable performance
temperature stability
author_facet Chenjing Wu
Manwen Yao
author_sort Chenjing Wu
title Dielectric tunable characteristics of compositional-gradient BaTi1−xSnxO3 thin films
title_short Dielectric tunable characteristics of compositional-gradient BaTi1−xSnxO3 thin films
title_full Dielectric tunable characteristics of compositional-gradient BaTi1−xSnxO3 thin films
title_fullStr Dielectric tunable characteristics of compositional-gradient BaTi1−xSnxO3 thin films
title_full_unstemmed Dielectric tunable characteristics of compositional-gradient BaTi1−xSnxO3 thin films
title_sort dielectric tunable characteristics of compositional-gradient bati1−xsnxo3 thin films
publisher World Scientific Publishing
series Journal of Advanced Dielectrics
issn 2010-135X
2010-1368
publishDate 2021-08-01
description Compositional-gradient BaTi1−xSnxO3 thin films on Pt(100)/Ti/SiO2/Si substrates are fabricated with sol–gel using spin coating. All of the structures of the prepared thin films are of single-phase crystalline perovskite with a dense and crack-free surface morphology. BTS10/15/20 thin film exhibits enhanced temperature stability in its dielectric behavior. The temperature coefficient of capacitance TCC20−150 in the temperature range from 20∘C to 150∘C is − 0.9 × 10−4/∘C and that of TCC20−(−95) in the temperature range from 20∘C to − 95∘C is − 3.8 × 10−4/∘C. Furthermore, the thin films show low leakage current density and dielectric loss. High and stable dielectric tunable performances are found in BTS10/15/20 thin films: the dielectric tunability of the thin films is around 20.1% under a bias voltage of 8 V at 1 MHz and the corresponding dielectric constant is in the range between 89 and 111, which is beneficial for impedance matching in circuits. Dielectric tunability can be obtained under a low tuning voltage, which helps ensure safety. The simulated resonant frequency of the compositional-gradient BTS thin films depends on the bias electric field, showing compositional-gradient BTS thin films could be used in electrically tunable components and devices. These properties make compositional-gradient BTS thin films a promising candidate for dielectric tuning.
topic barium stannate titanate
compositional-gradient thin films
dielectric tunable performance
temperature stability
url http://www.worldscientific.com/doi/epdf/10.1142/S2010135X21500193
work_keys_str_mv AT chenjingwu dielectrictunablecharacteristicsofcompositionalgradientbati1xsnxo3thinfilms
AT manwenyao dielectrictunablecharacteristicsofcompositionalgradientbati1xsnxo3thinfilms
_version_ 1717761093070225408