Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

The current transport mechanism of graphene formed on AlxGa1−xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current–voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier heig...

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Main Authors: Bhishma Pandit, Tae Hoon Seo, Beo Deul Ryu, Jaehee Cho
Format: Article
Language:English
Published: AIP Publishing LLC 2016-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4953917
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spelling doaj-9ca55d8e56444ada81a8a65d6e92b7e32020-11-24T21:14:27ZengAIP Publishing LLCAIP Advances2158-32262016-06-0166065007065007-510.1063/1.4953917033606ADVCurrent transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractionsBhishma Pandit0Tae Hoon Seo1Beo Deul Ryu2Jaehee Cho3School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 54896, Republic of KoreaSoft innovative Materials Research Center, Korea Institute of Science and Technology (KIST), Jeonbuk 565-905, Republic of KoreaSchool of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 54896, Republic of KoreaSchool of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 54896, Republic of KoreaThe current transport mechanism of graphene formed on AlxGa1−xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current–voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.http://dx.doi.org/10.1063/1.4953917
collection DOAJ
language English
format Article
sources DOAJ
author Bhishma Pandit
Tae Hoon Seo
Beo Deul Ryu
Jaehee Cho
spellingShingle Bhishma Pandit
Tae Hoon Seo
Beo Deul Ryu
Jaehee Cho
Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions
AIP Advances
author_facet Bhishma Pandit
Tae Hoon Seo
Beo Deul Ryu
Jaehee Cho
author_sort Bhishma Pandit
title Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions
title_short Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions
title_full Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions
title_fullStr Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions
title_full_unstemmed Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions
title_sort current transport mechanism in graphene/algan/gan heterostructures with various al mole fractions
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2016-06-01
description The current transport mechanism of graphene formed on AlxGa1−xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current–voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.
url http://dx.doi.org/10.1063/1.4953917
work_keys_str_mv AT bhishmapandit currenttransportmechanismingraphenealganganheterostructureswithvariousalmolefractions
AT taehoonseo currenttransportmechanismingraphenealganganheterostructureswithvariousalmolefractions
AT beodeulryu currenttransportmechanismingraphenealganganheterostructureswithvariousalmolefractions
AT jaeheecho currenttransportmechanismingraphenealganganheterostructureswithvariousalmolefractions
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