Impact of negative and positive bias temperature stress on 6T-SRAM cells

Impact of negative and positive bias temperature stress on 6T-SRAM cells

With introduction of high-k gate oxide materials, the degradation effect <i>Positive Bias Temperature Instability</i> (PBTI) is starting to play an important role. Together with the still effective <i>Negative Bias Temperature Instability</i> (...

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Bibliographic Details
Main Authors:	S. Drapatz, G. Georgakos, D. Schmitt-Landsiedel
Format:	Article
Language:	deu
Published:	Copernicus Publications 2009-05-01
Series:	Advances in Radio Science
Online Access:	http://www.adv-radio-sci.net/7/191/2009/ars-7-191-2009.pdf

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