Characteristics of InN epilayers grown with H2-assistance
A series of InN films were grown on GaN-on-sapphire template with H2 pulse flow by metal organic vapor phase epitaxy. The scanning electron microscopy and atomic force microscopy observations demonstrate that the smooth surface has been achieved. The X-ray diffraction and Raman spectra measurements...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5001546 |