3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

• Main Authors: Chi-Kang Li, Chen-Kuo Wu, Chung-Cheng Hsu, Li-Shuo Lu, Heng Li, Tien-Chang Lu, Yuh-Renn Wu
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2016-05-01
• Series: AIP Advances
• Online Access: http://dx.doi.org/10.1063/1.4950771

In this paper, influence of a V-pit embedded inside the multiple quantum wells (MQWs) LED was studied. A fully three-dimensional stress-strain solver and Poisson-drift-diffusion solver are employed to study the current path, where the quantum efficiency and turn-on voltage will be discussed. Our results show that the hole current is not only from top into lateral quantum wells (QWs) but flowing through shallow sidewall QWs and then injecting into the deeper lateral QWs in V-pit structures, where the V-pit geometry provides more percolation length for holes to make the distribution uniform along lateral MQWs. The IQE behavior with different V-pit sizes, threading dislocation densities, and current densities were analyzed. Substantially, the variation of the quantum efficiency for different V-pit sizes is due to the trap-assisted nonradiative recombination, effective QW ratio, and ability of hole injections.