A Standard CMOS Humidity Sensor without Post-Processing

A Standard CMOS Humidity Sensor without Post-Processing

A 2 µW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 µm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 hu...

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Bibliographic Details
Main Authors: Oleg Nizhnik, Kazusuke Maenaka, Kohei Higuchi
Format: Article
Language:English
Published: MDPI AG 2011-06-01
Series:Sensors
Subjects:
capacitive sensors
microsensors
humidity measurement
CMOS integrated circuits
Online Access:http://www.mdpi.com/1424-8220/11/6/6197/
Description
Summary:A 2 µW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 µm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.
ISSN:1424-8220

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