Narrow-gap, semiconducting, superhard amorphous carbon with high toughness, derived from C60 fullerene
Summary: New carbon forms that exhibit extraordinary physicochemical properties can be generated from nanostructured precursors under extreme pressure. Nevertheless, synthesis of such fascinating materials is often not well understood. That is the case of the C60 precursor, with irreproducible resul...
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| Format: | Article |
| Language: | English |
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Elsevier
2021-09-01
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| Series: | Cell Reports Physical Science |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666386421002903 |
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doaj-9ab774dc193e41fa8c3b1a6dcc3a5767 |
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Article |
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DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Shuangshuang Zhang Yingju Wu Kun Luo Bing Liu Yu Shu Yang Zhang Lei Sun Yufei Gao Mengdong Ma Zihe Li Baozhong Li Pan Ying Zhisheng Zhao Wentao Hu Vicente Benavides Olga P. Chernogorova Alexander V. Soldatov Julong He Dongli Yu Bo Xu Yongjun Tian |
| spellingShingle |
Shuangshuang Zhang Yingju Wu Kun Luo Bing Liu Yu Shu Yang Zhang Lei Sun Yufei Gao Mengdong Ma Zihe Li Baozhong Li Pan Ying Zhisheng Zhao Wentao Hu Vicente Benavides Olga P. Chernogorova Alexander V. Soldatov Julong He Dongli Yu Bo Xu Yongjun Tian Narrow-gap, semiconducting, superhard amorphous carbon with high toughness, derived from C60 fullerene Cell Reports Physical Science amorphous carbon semiconductor fullerene high pressure and high temperature superhard material |
| author_facet |
Shuangshuang Zhang Yingju Wu Kun Luo Bing Liu Yu Shu Yang Zhang Lei Sun Yufei Gao Mengdong Ma Zihe Li Baozhong Li Pan Ying Zhisheng Zhao Wentao Hu Vicente Benavides Olga P. Chernogorova Alexander V. Soldatov Julong He Dongli Yu Bo Xu Yongjun Tian |
| author_sort |
Shuangshuang Zhang |
| title |
Narrow-gap, semiconducting, superhard amorphous carbon with high toughness, derived from C60 fullerene |
| title_short |
Narrow-gap, semiconducting, superhard amorphous carbon with high toughness, derived from C60 fullerene |
| title_full |
Narrow-gap, semiconducting, superhard amorphous carbon with high toughness, derived from C60 fullerene |
| title_fullStr |
Narrow-gap, semiconducting, superhard amorphous carbon with high toughness, derived from C60 fullerene |
| title_full_unstemmed |
Narrow-gap, semiconducting, superhard amorphous carbon with high toughness, derived from C60 fullerene |
| title_sort |
narrow-gap, semiconducting, superhard amorphous carbon with high toughness, derived from c60 fullerene |
| publisher |
Elsevier |
| series |
Cell Reports Physical Science |
| issn |
2666-3864 |
| publishDate |
2021-09-01 |
| description |
Summary: New carbon forms that exhibit extraordinary physicochemical properties can be generated from nanostructured precursors under extreme pressure. Nevertheless, synthesis of such fascinating materials is often not well understood. That is the case of the C60 precursor, with irreproducible results that impede further progress in the materials design. Here, the semiconducting amorphous carbon, having band gaps of 0.1–0.3 eV and the advantages of isotropic superhardness and superior toughness over single-crystal diamond and inorganic glasses, is produced from fullerene at high pressure and moderate temperatures. A systematic investigation of the structure and bonding evolution is carried out with complementary characterization methods, which helps to build a model of the transformation that can be used in further high-pressure/high-temperature (high p,T) synthesis of novel nano-carbon systems for advanced applications. The amorphous carbon materials produced have the potential of accomplishing the demanding optoelectronic applications that diamond and graphene cannot achieve. |
| topic |
amorphous carbon semiconductor fullerene high pressure and high temperature superhard material |
| url |
http://www.sciencedirect.com/science/article/pii/S2666386421002903 |
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doaj-9ab774dc193e41fa8c3b1a6dcc3a57672021-09-25T05:11:53ZengElsevierCell Reports Physical Science2666-38642021-09-0129100575Narrow-gap, semiconducting, superhard amorphous carbon with high toughness, derived from C60 fullereneShuangshuang Zhang0Yingju Wu1Kun Luo2Bing Liu3Yu Shu4Yang Zhang5Lei Sun6Yufei Gao7Mengdong Ma8Zihe Li9Baozhong Li10Pan Ying11Zhisheng Zhao12Wentao Hu13Vicente Benavides14Olga P. Chernogorova15Alexander V. Soldatov16Julong He17Dongli Yu18Bo Xu19Yongjun Tian20Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, ChinaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, ChinaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, China; Key Laboratory of Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, ChinaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, ChinaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, ChinaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, China; Key Laboratory of Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, ChinaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, ChinaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, China; Key Laboratory of Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, ChinaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, ChinaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, ChinaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, ChinaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, China; Key Laboratory of Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, ChinaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, China; Corresponding authorCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, ChinaDepartment of Engineering Sciences and Mathematics, Luleå University of Technology, SE-97187 Luleå, Sweden; Department of Materials Science, Saarland University, Campus D3.3, 66123 Saarbrücken, GermanyBaikov Institute of Metallurgy and Materials Science, Moscow 119334, RussiaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, China; Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China; Department of Physics, Harvard University, Cambridge, MA 02136, USA; Corresponding authorCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, ChinaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, ChinaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, ChinaCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, China; Corresponding authorSummary: New carbon forms that exhibit extraordinary physicochemical properties can be generated from nanostructured precursors under extreme pressure. Nevertheless, synthesis of such fascinating materials is often not well understood. That is the case of the C60 precursor, with irreproducible results that impede further progress in the materials design. Here, the semiconducting amorphous carbon, having band gaps of 0.1–0.3 eV and the advantages of isotropic superhardness and superior toughness over single-crystal diamond and inorganic glasses, is produced from fullerene at high pressure and moderate temperatures. A systematic investigation of the structure and bonding evolution is carried out with complementary characterization methods, which helps to build a model of the transformation that can be used in further high-pressure/high-temperature (high p,T) synthesis of novel nano-carbon systems for advanced applications. The amorphous carbon materials produced have the potential of accomplishing the demanding optoelectronic applications that diamond and graphene cannot achieve.http://www.sciencedirect.com/science/article/pii/S2666386421002903amorphous carbonsemiconductorfullerenehigh pressure and high temperaturesuperhard material |