Graded-gap semiconductors and their application

In graded-gap semiconductors spatial dependence of energy gap leads to quasi-electrical embedded layers of different size for holes and electrons, respectively alter their mobility. This results in diffusion-drift mechanism of transfer of alignment-grown carriers, change of coordinate distribution o...

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Bibliographic Details
Main Authors: Степан Петрович Новосядлий, Тарас Петрович Кіндрат
Format: Article
Language:English
Published: PC Technology Center 2013-12-01
Series:Tehnologìčnij Audit ta Rezervi Virobnictva
Subjects:
Online Access:http://journals.uran.ua/tarp/article/view/19578

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