Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al2O3 high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In...

Full description

Bibliographic Details
Main Authors:	G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H. Behmenburg, P. Gamarra, G. Patriarche, I. Vickridge, M. A. di Forte-Poisson, P. Vogt, M. Kneissl, M. Morales, P. Ruterana, A. Cavallini, D. Cavalcoli, C. Giesen, M. Heuken, C. Trager-Cowan
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2014-12-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4903227

Similar Items

InAlGaN/GaN HEMTs at Cryogenic Temperatures
by: Ezgi Dogmus, et al.
Published: (2016-06-01)

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
by: Tzu-Hsuan Chang, et al.
Published: (2017-07-01)

Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT
by: Hideyuki Itakura, et al.
Published: (2020-02-01)

AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode
by: Dimitrocenko L., et al.
Published: (2008-01-01)

Investigation of deep level defects in GaN:C, GaN:Mg and pseudomorphic AlGaN/GaN films
by: Armstrong, Andrew M.
Published: (2006)

Electroreflectance spectra of AlGaN/AlN/GaN heterostructure
by: Sheng-Chih Wang, et al.
Published: (2008)

Investigation of InAlN/GaN and P-GaN/AlGaN/GaN hetero-structure fields effect transistors
by: Li Yi Peng, et al.
Published: (2016)

The characteristics of AlGaN/GaN heterostructure
by: Y.H.Hong, et al.
Published: (2006)

Investigation and Fabrication of AlGaN/InGaN/GaN DHFET
by: Keng-Yu Chen, et al.
Published: (2004)

Epitaxy of GaN by MOCVD and Fabrication of AlGaN/GaN MODFET
by: Chang-Yi Yang, et al.
Published: (2001)

Investigation and Fabrication of AlGaN/InGaN/GaN DHFET
by: Keng-Yu Chen, et al.
Published: (2004)

The Fabrication and Analysis of High Frequency AlGaN/GaN HEMT and AlInN/GaN HEMT
by: Liu, Cheng-Chih, et al.
Published: (2012)

Magnetotransport properties in AlGaN/GaN and AlGaAs/GaAs two-dimensional electron systems
by: Jing-Han Chen, et al.
Published: (2006)

Electron heating in AlGaN/GaN and AlGaAs/GaAs two-dimensional electron systems
by: Wen-Chang Hsueh, et al.
Published: (2007)

On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes
by: Jiamang Che, et al.
Published: (2018-11-01)

High Breakdown Voltage in AlGaN/GaN HEMTs by Using AlGaN/GaN/AlGaN Quantum-Well Electron-Blocking-Layer for Power-Switching Applications
by: Ching-Yun LIU, et al.
Published: (2013)

AlGaN/GaN HEMT With 300-GHz fmax
by: Chung, Jinwook, et al.
Published: (2013)

Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes
by: Hogyoung Kim, et al.
Published: (2020-05-01)

AlGaN/GaN HEMTs with Backgate Structure
by: Wei-Tse Lin, et al.
Published: (2017)

Optical properties of AlGaN/GaN heterostructures
by: Jheng-Wei Lee, et al.
Published: (2008)

AlGaN/GaN grown on different substrates
by: Lien Shao-Tang, et al.
Published: (2005)

Growth and characterization of AlGaN/GaN heterostructures
by: Ming-Horng Gau, et al.
Published: (2004)

Analysis of the characteristics of AlGaN/ GaN HEMT
by: Ching-Hua Niu, et al.

Fabrication and Characterization of AlGaN/GaN HEMTs
by: Lin Ruei Ching, et al.
Published: (2008)

Electrical transport in AlGaN/GaN heterostructures
by: Kun-Ta Wu, et al.
Published: (2005)

Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN and InGaN/AlInGaN MQW Laser Diodes
by: Po-Yuan Su, et al.
Published: (2008)

The Study of AlGaN Metal-Semiconductor-Metal and p-GaN/i-InGaN/n-GaN Photodetectors
by: Ming-Hsien Wu, et al.
Published: (2006)

AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation
by: Mizutani, T., et al.
Published: (2007)

Growth, Fabrication and Characterization of AlGaN/GaN Schottky Diodes and AlInN/GaN Field-Effect Transistors
by: Geng-Yen Lee, et al.
Published: (2015)

CMOS-Compatible Ti/Al Ohmic Contacts (Rc < 0.3 Ω mm) for u-AlGaN/AlN/GaN HEMTs by Low Temperature Annealing (< 450 °C)
by: Liu, Zhihong, et al.
Published: (2018)

MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
by: Haruka Matsuura, et al.
Published: (2019-04-01)

Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface
Published: (2016)

Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures
by: Mohammad Abdul Alim, et al.
Published: (2021-05-01)

Effects of AlN interlayer on the properties of AlGaN/GaN HEMT structures
by: Jun Xiang Liang, et al.
Published: (2013)

Determination of built-in electric field of AlGaN(/AlN)/GaN HEMT
by: Kun-Jia Hsieh, et al.

Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs
by: Ki-Sik Im, et al.
Published: (2020-09-01)

Fabrication and Characterization of Enhancement-mode p-GaN/AlGaN/GaN HEMTs
by: Hsiao, Tsung-Chieh, et al.
Published: (2013)

Shrinking Gate Length by Oxidization Treatment in GaN/AlGaN/GaN HEMTs
by: Yen-Cheng Liu, et al.
Published: (2009)

Interface Charge Engineering in AlGaN/GaN Heterostructures for GaN Power Devices
by: Nakazawa, Satoshi
Published: (2019)

Fin and Island Isolation of AlGaN/GaN HFETs and Temperature-dependent Modeling of Drain Current Characteristics of AlGaN/GaN HFETs
by: AlOtaibi, Bandar
Published: (2011)