Energy Harvesting from a Thermoelectric Zinc Antimonide Thin Film under Steady and Unsteady Operating Conditions

In practice, there are some considerations to study stability, reliability, and output power optimization of a thermoelectric thin film operating dynamically. In this study stability and performance of a zinc antimonide thin film thermoelectric (TE) specimen is evaluated under transient with thermal...

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Main Authors: Mojtaba Mirhosseini, Alireza Rezania, Bo Iversen, Lasse Rosendahl
Format: Article
Language:English
Published: MDPI AG 2018-11-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/11/12/2365
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spelling doaj-9a0d7d76be964cf5abda43c95ccab53b2020-11-25T00:58:50ZengMDPI AGMaterials1996-19442018-11-011112236510.3390/ma11122365ma11122365Energy Harvesting from a Thermoelectric Zinc Antimonide Thin Film under Steady and Unsteady Operating ConditionsMojtaba Mirhosseini0Alireza Rezania1Bo Iversen2Lasse Rosendahl3Department of Energy Technology, Aalborg University, Pontoppidanstraede 111, DK-9220 Aalborg East, DenmarkDepartment of Energy Technology, Aalborg University, Pontoppidanstraede 111, DK-9220 Aalborg East, DenmarkCentre for Materials Crystallography, Department of Chemistry and iNANO, Aarhus University, Langelandsgade 140, DK-8000 Aarhus C, DenmarkDepartment of Energy Technology, Aalborg University, Pontoppidanstraede 111, DK-9220 Aalborg East, DenmarkIn practice, there are some considerations to study stability, reliability, and output power optimization of a thermoelectric thin film operating dynamically. In this study stability and performance of a zinc antimonide thin film thermoelectric (TE) specimen is evaluated under transient with thermal and electrical load conditions. Thermoelectric behavior of the specimen and captured energy in each part of a thermal cycle are investigated. Glass is used as the substrate of the thin film, where the heat flow is parallel to the length of the thermoelectric element. In this work, the thermoelectric specimen is fixed between a heat sink exposed to the ambient temperature and a heater block. The specimen is tested under various electrical load cycles during a wide range of thermal cycles. The thermal cycles are provided for five different aimed temperatures at the hot junction, from 160 to 350 &#176;C. The results show that the specimen generates approximately 30% of its total electrical energy during the cooling stage and 70% during the heating stage. The thin film generates maximum power of 8.78, 15.73, 27.81, 42.13, and 60.74 kW per unit volume of the thermoelectric material (kW/m<sup>3</sup>), excluding the substrate, corresponding to hot side temperature of 160, 200, 250, 300, and 350 &#176;C, respectively. Furthermore, the results indicate that the thin film has high reliability after about one thousand thermal and electrical cycles, whereas there is no performance degradation.https://www.mdpi.com/1996-1944/11/12/2365thermal cyclingthin film thermoelectric generator (TFTEG)electrical load cyclingtransient behaviorzinc antimonidesemiconductor
collection DOAJ
language English
format Article
sources DOAJ
author Mojtaba Mirhosseini
Alireza Rezania
Bo Iversen
Lasse Rosendahl
spellingShingle Mojtaba Mirhosseini
Alireza Rezania
Bo Iversen
Lasse Rosendahl
Energy Harvesting from a Thermoelectric Zinc Antimonide Thin Film under Steady and Unsteady Operating Conditions
Materials
thermal cycling
thin film thermoelectric generator (TFTEG)
electrical load cycling
transient behavior
zinc antimonide
semiconductor
author_facet Mojtaba Mirhosseini
Alireza Rezania
Bo Iversen
Lasse Rosendahl
author_sort Mojtaba Mirhosseini
title Energy Harvesting from a Thermoelectric Zinc Antimonide Thin Film under Steady and Unsteady Operating Conditions
title_short Energy Harvesting from a Thermoelectric Zinc Antimonide Thin Film under Steady and Unsteady Operating Conditions
title_full Energy Harvesting from a Thermoelectric Zinc Antimonide Thin Film under Steady and Unsteady Operating Conditions
title_fullStr Energy Harvesting from a Thermoelectric Zinc Antimonide Thin Film under Steady and Unsteady Operating Conditions
title_full_unstemmed Energy Harvesting from a Thermoelectric Zinc Antimonide Thin Film under Steady and Unsteady Operating Conditions
title_sort energy harvesting from a thermoelectric zinc antimonide thin film under steady and unsteady operating conditions
publisher MDPI AG
series Materials
issn 1996-1944
publishDate 2018-11-01
description In practice, there are some considerations to study stability, reliability, and output power optimization of a thermoelectric thin film operating dynamically. In this study stability and performance of a zinc antimonide thin film thermoelectric (TE) specimen is evaluated under transient with thermal and electrical load conditions. Thermoelectric behavior of the specimen and captured energy in each part of a thermal cycle are investigated. Glass is used as the substrate of the thin film, where the heat flow is parallel to the length of the thermoelectric element. In this work, the thermoelectric specimen is fixed between a heat sink exposed to the ambient temperature and a heater block. The specimen is tested under various electrical load cycles during a wide range of thermal cycles. The thermal cycles are provided for five different aimed temperatures at the hot junction, from 160 to 350 &#176;C. The results show that the specimen generates approximately 30% of its total electrical energy during the cooling stage and 70% during the heating stage. The thin film generates maximum power of 8.78, 15.73, 27.81, 42.13, and 60.74 kW per unit volume of the thermoelectric material (kW/m<sup>3</sup>), excluding the substrate, corresponding to hot side temperature of 160, 200, 250, 300, and 350 &#176;C, respectively. Furthermore, the results indicate that the thin film has high reliability after about one thousand thermal and electrical cycles, whereas there is no performance degradation.
topic thermal cycling
thin film thermoelectric generator (TFTEG)
electrical load cycling
transient behavior
zinc antimonide
semiconductor
url https://www.mdpi.com/1996-1944/11/12/2365
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