Study on the Relationship between BO–LID and LeTID in Czochralski-Grown Monocrystalline Silicon

• Main Authors: Hailing Li, Xinxin Wang, Fang Lv, Yibo Wang, Shangzhi Cheng, Chunlan Zhou, Wenjing Wang
• Format: Article
• Language: English
• Published: MDPI AG 2020-11-01
• Series: Energies
• Subjects: Czochralski-grown monocrystalline silicon; BO–LID; LeTID; k-value
• Online Access: https://www.mdpi.com/1996-1073/13/22/5961

Most research about Light and elevated Temperature Induced Degradation (LeTID) is focused on multicrystalline silicon (mc-Si). In this work, the degradation kinetics of Czochralski-grown monocrystalline silicon (Cz-Si) induced by light at an elevated temperature were studied in detail. The lifetime evolutions over time during (1) light soaking (LS), (2) dark annealing–light soaking (DA–LS), and (3) DA–LS cycling experiments were analyzed. Ratios of the capture coefficients for the electrons and holes (k-values) were used to characterize the possible defects responsible for degradation. We found that the behavior of degradation and recovery under light soaking with or without a dark annealing treatment was mostly like boron–oxygen (BO)-related degradation but gave k-values from 19 to 25. In the DA–LS cycling experiment, the max degradation amplitudes hardly changed from the second cycle, and the k-values decreased with an increase in the cycling number. We then analyzed the possible reactions in Cz-Si and discuss the relationship between BO defects and LeTID.