Electrical contact uniformity and surface oxidation of ternary chalcogenide alloys

• Main Authors: P. A. Sharma, M. Brumbach, D. P. Adams, J. F. Ihlefeld, A. L. Lima-Sharma, S. Chou, J. D. Sugar, P. Lu, J. R. Michael, D. Ingersoll
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2019-01-01
• Series: AIP Advances
• Online Access: http://dx.doi.org/10.1063/1.5081818

Uniform metal contacts are critical for advanced thermoelectric devices. The uniformity of the contact resistance for gold, tungsten, and SrRuO3 electrodes on polycrystalline ternary Bi2Te3-based alloys for different types of surface cleaning procedures was characterized. The presence of a nanometer-thick native oxide layer on the Bi2Te3 surface leads to large and non-uniform contact resistance. Surface treatments included solvent cleans and chemical and dry etching prior to metallization of the Bi2Te3. Only etching the surface led to a significant improvement in contact resistance uniformity. None of the tested contacts reacted with the underlying Bi2Te3 substrate. Etching resulted in the removal of the native oxide on the Bi2Te3 surface, which was characterized using X-ray photoelectron spectroscopy (XPS). The average thickness, chemistry, and dry etch rate of the native oxide was further characterized using XPS. The non-uniformity in contact resistance suggests that the native oxide grows non-uniformly on polycrystalline bismuth telluride surfaces.