The Development of CMOS Amperometric Sensing Chip with a Novel 3-Dimensional TiN Nano-Electrode Array
An electrochemical sensing chip with an 8 × 8 array of titanium nitride three-dimensional nano-electrodes (TiN 3D-NEA) was designed and fabricated via a standard integrated complementary metal oxide semiconductor process. Each nano-electrode in 3D-NEA exhibited a pole-like structure with a...
Main Authors: | Chun-Lung Lien, Chiun-Jye Yuan |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2019-02-01
|
Series: | Sensors |
Subjects: | |
Online Access: | https://www.mdpi.com/1424-8220/19/5/994 |
Similar Items
-
Controlling the TiN Electrode Work Function at the Atomistic Level: A First Principles Investigation
by: Arrigo Calzolari, et al.
Published: (2020-01-01) -
Surface modification of nano-TiN by using silane coupling agent
by: Cheng Guojun, et al.
Published: (2014-06-01) -
The development of amperometric sensing chip with a novel 3-dimensional TiN nanoelectrode array by CMOS process
by: Lien, Chun-Lung, et al.
Published: (2019) -
Titanium Matrix Composite Ti/TiN Produced by Diode Laser Gas Nitriding
by: Aleksander Lisiecki
Published: (2015-01-01) -
Densification and microstructure of Si3N4-TiN ceramic composites
by: T. S. Ferreira, et al.