Strain relaxation of germanium-tin (GeSn) fins

Strain relaxation of germanium-tin (GeSn) fins

Strain relaxation of biaxially strained Ge1-xSnx layer when it is patterned into Ge1-xSnx fin structures is studied. Ge1-xSnx-on-insulator (GeSnOI) substrate was realized using a direct wafer bonding (DWB) technique and Ge1-xSnx fin structures were formed by electron beam lithography (EBL) patternin...

Full description

Bibliographic Details
Main Authors: Yuye Kang, Yi-Chiau Huang, Kwang Hong Lee, Shuyu Bao, Wei Wang, Dian Lei, Saeid Masudy-Panah, Yuan Dong, Ying Wu, Shengqiang Xu, Chuan Seng Tan, Xiao Gong, Yee-Chia Yeo
Format: Article
Language:English
Published: AIP Publishing LLC 2018-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5012559

Similar Items

Similar Items