A 120–150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm P<sub>sat</sub> for Sub-THz Imaging System

A 120–150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm P<sub>sat</sub> for Sub-THz Imaging System

This paper presents a high-gain D-band power amplifier (PA) fabricated with 28-nm CMOS technology for a sub-terahertz frequency modulated continuous wave imaging system. It adopts two-channel power combining using artificial transmission lines to absorb the parasitic capacitance of the ground-signal...

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Bibliographic Details
Main Authors:	Jincheng Zhang, Tianxiang Wu, Lihe Nie, Shunli Ma, Yong Chen, Junyan Ren
Format:	Article
Language:	English
Published:	IEEE 2021-01-01
Series:	IEEE Access
Subjects:	D-band power amplifier (PA) sub-terahertz (sub-THz) CMOS power combining imaging system
Online Access:	https://ieeexplore.ieee.org/document/9432813/

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