Recent progress on metal halide perovskite field-effect transistors

Recent progress on metal halide perovskite field-effect transistors

Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in three-dimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolu...

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Bibliographic Details
Main Authors:	Huihui Zhu, Ao Liu, Yong-Young Noh
Format:	Article
Language:	English
Published:	Taylor & Francis Group 2021-07-01
Series:	Journal of Information Display
Subjects:	metal halide perovskite field-effect transistor lead/tin-based perovskite ion migration stability
Online Access:	http://dx.doi.org/10.1080/15980316.2021.1957725

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