Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior
The effects of the hole injection modulated by using a three-terminal GaInN-based light emitter, light-emitting triode (LET), on carrier recombination behavior and efficiency droop are investigated. It was found that the lateral electric field created by applying voltage bias between the two anodes...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4932632 |