Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior

Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior

The effects of the hole injection modulated by using a three-terminal GaInN-based light emitter, light-emitting triode (LET), on carrier recombination behavior and efficiency droop are investigated. It was found that the lateral electric field created by applying voltage bias between the two anodes...

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Main Authors: Sunyong Hwang, Dong Yeong Kim, Jun Hyuk Park, Han-Youl Ryu, Jong Kyu Kim
Format: Article
Language:English
Published: AIP Publishing LLC 2015-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4932632
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spelling doaj-987f7604048b44a7a9b8b61c3073fc262020-11-25T01:12:30ZengAIP Publishing LLCAIP Advances2158-32262015-10-01510107104107104-610.1063/1.4932632005510ADVModulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behaviorSunyong Hwang0Dong Yeong Kim1Jun Hyuk Park2Han-Youl Ryu3Jong Kyu Kim4Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, KoreaDepartment of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, KoreaDepartment of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, KoreaDepartment of Physics, Inha University, Incheon 402-751, KoreaDepartment of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, KoreaThe effects of the hole injection modulated by using a three-terminal GaInN-based light emitter, light-emitting triode (LET), on carrier recombination behavior and efficiency droop are investigated. It was found that the lateral electric field created by applying voltage bias between the two anodes effectively reduces efficiency droop as well as dynamic conductance of LETs. Detailed analyses of LETs under various operation conditions by APSYS simulations reveal that the asymmetry in carrier transport between electrons and holes is alleviated by promoted injection of hot holes over the potential barrier, increasing the hole concentration as well as the radiative recombination rate in the multiple quantum well active region.http://dx.doi.org/10.1063/1.4932632
collection DOAJ
language English
format Article
sources DOAJ
author Sunyong Hwang
Dong Yeong Kim
Jun Hyuk Park
Han-Youl Ryu
Jong Kyu Kim
spellingShingle Sunyong Hwang
Dong Yeong Kim
Jun Hyuk Park
Han-Youl Ryu
Jong Kyu Kim
Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior
AIP Advances
author_facet Sunyong Hwang
Dong Yeong Kim
Jun Hyuk Park
Han-Youl Ryu
Jong Kyu Kim
author_sort Sunyong Hwang
title Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior
title_short Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior
title_full Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior
title_fullStr Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior
title_full_unstemmed Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior
title_sort modulation of hole-injection in gainn-light emitting triodes and its effect on carrier recombination behavior
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2015-10-01
description The effects of the hole injection modulated by using a three-terminal GaInN-based light emitter, light-emitting triode (LET), on carrier recombination behavior and efficiency droop are investigated. It was found that the lateral electric field created by applying voltage bias between the two anodes effectively reduces efficiency droop as well as dynamic conductance of LETs. Detailed analyses of LETs under various operation conditions by APSYS simulations reveal that the asymmetry in carrier transport between electrons and holes is alleviated by promoted injection of hot holes over the potential barrier, increasing the hole concentration as well as the radiative recombination rate in the multiple quantum well active region.
url http://dx.doi.org/10.1063/1.4932632
work_keys_str_mv AT sunyonghwang modulationofholeinjectioningainnlightemittingtriodesanditseffectoncarrierrecombinationbehavior
AT dongyeongkim modulationofholeinjectioningainnlightemittingtriodesanditseffectoncarrierrecombinationbehavior
AT junhyukpark modulationofholeinjectioningainnlightemittingtriodesanditseffectoncarrierrecombinationbehavior
AT hanyoulryu modulationofholeinjectioningainnlightemittingtriodesanditseffectoncarrierrecombinationbehavior
AT jongkyukim modulationofholeinjectioningainnlightemittingtriodesanditseffectoncarrierrecombinationbehavior
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