Carrier lifetime enhancement in halide perovskite via remote epitaxy

Crystallographic dislocation has proven harmful to the carrier dynamics in conventional semiconductors but it is unexplored in metal halide perovskites. Here Jiang et al. grow remote epitaxial perovskite films on graphene with density-controlled dislocations and confirm their negative impact.

Bibliographic Details
Main Authors:	Jie Jiang, Xin Sun, Xinchun Chen, Baiwei Wang, Zhizhong Chen, Yang Hu, Yuwei Guo, Lifu Zhang, Yuan Ma, Lei Gao, Fengshan Zheng, Lei Jin, Min Chen, Zhiwei Ma, Yuanyuan Zhou, Nitin P. Padture, Kory Beach, Humberto Terrones, Yunfeng Shi, Daniel Gall, Toh-Ming Lu, Esther Wertz, Jing Feng, Jian Shi
Format:	Article
Language:	English
Published:	Nature Publishing Group 2019-09-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/s41467-019-12056-1

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spelling	doaj-980ef2ab3f98472697eb340f3a1e3c6c2021-05-11T12:34:28ZengNature Publishing GroupNature Communications2041-17232019-09-0110111210.1038/s41467-019-12056-1Carrier lifetime enhancement in halide perovskite via remote epitaxyJie Jiang0Xin Sun1Xinchun Chen2Baiwei Wang3Zhizhong Chen4Yang Hu5Yuwei Guo6Lifu Zhang7Yuan Ma8Lei Gao9Fengshan Zheng10Lei Jin11Min Chen12Zhiwei Ma13Yuanyuan Zhou14Nitin P. Padture15Kory Beach16Humberto Terrones17Yunfeng Shi18Daniel Gall19Toh-Ming Lu20Esther Wertz21Jing Feng22Jian Shi23Department of Materials Science and Engineering, Kunming University of Science and TechnologyDepartment of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic InstituteState Key Laboratory of Tribology, Tsinghua UniversityDepartment of Materials Science and Engineering, Rensselaer Polytechnic InstituteDepartment of Materials Science and Engineering, Rensselaer Polytechnic InstituteDepartment of Materials Science and Engineering, Rensselaer Polytechnic InstituteDepartment of Materials Science and Engineering, Rensselaer Polytechnic InstituteDepartment of Materials Science and Engineering, Rensselaer Polytechnic InstituteBeijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology BeijingBeijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology BeijingErnst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum JülichErnst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum JülichSchool of Engineering, Brown UniversitySchool of Engineering, Brown UniversitySchool of Engineering, Brown UniversitySchool of Engineering, Brown UniversityDepartment of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic InstituteDepartment of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic InstituteDepartment of Materials Science and Engineering, Rensselaer Polytechnic InstituteDepartment of Materials Science and Engineering, Rensselaer Polytechnic InstituteDepartment of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic InstituteDepartment of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic InstituteDepartment of Materials Science and Engineering, Kunming University of Science and TechnologyDepartment of Materials Science and Engineering, Rensselaer Polytechnic InstituteCrystallographic dislocation has proven harmful to the carrier dynamics in conventional semiconductors but it is unexplored in metal halide perovskites. Here Jiang et al. grow remote epitaxial perovskite films on graphene with density-controlled dislocations and confirm their negative impact.https://doi.org/10.1038/s41467-019-12056-1
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Jie Jiang Xin Sun Xinchun Chen Baiwei Wang Zhizhong Chen Yang Hu Yuwei Guo Lifu Zhang Yuan Ma Lei Gao Fengshan Zheng Lei Jin Min Chen Zhiwei Ma Yuanyuan Zhou Nitin P. Padture Kory Beach Humberto Terrones Yunfeng Shi Daniel Gall Toh-Ming Lu Esther Wertz Jing Feng Jian Shi
spellingShingle	Jie Jiang Xin Sun Xinchun Chen Baiwei Wang Zhizhong Chen Yang Hu Yuwei Guo Lifu Zhang Yuan Ma Lei Gao Fengshan Zheng Lei Jin Min Chen Zhiwei Ma Yuanyuan Zhou Nitin P. Padture Kory Beach Humberto Terrones Yunfeng Shi Daniel Gall Toh-Ming Lu Esther Wertz Jing Feng Jian Shi Carrier lifetime enhancement in halide perovskite via remote epitaxy Nature Communications
author_facet	Jie Jiang Xin Sun Xinchun Chen Baiwei Wang Zhizhong Chen Yang Hu Yuwei Guo Lifu Zhang Yuan Ma Lei Gao Fengshan Zheng Lei Jin Min Chen Zhiwei Ma Yuanyuan Zhou Nitin P. Padture Kory Beach Humberto Terrones Yunfeng Shi Daniel Gall Toh-Ming Lu Esther Wertz Jing Feng Jian Shi
author_sort	Jie Jiang
title	Carrier lifetime enhancement in halide perovskite via remote epitaxy
title_short	Carrier lifetime enhancement in halide perovskite via remote epitaxy
title_full	Carrier lifetime enhancement in halide perovskite via remote epitaxy
title_fullStr	Carrier lifetime enhancement in halide perovskite via remote epitaxy
title_full_unstemmed	Carrier lifetime enhancement in halide perovskite via remote epitaxy
title_sort	carrier lifetime enhancement in halide perovskite via remote epitaxy
publisher	Nature Publishing Group
series	Nature Communications
issn	2041-1723
publishDate	2019-09-01
description	Crystallographic dislocation has proven harmful to the carrier dynamics in conventional semiconductors but it is unexplored in metal halide perovskites. Here Jiang et al. grow remote epitaxial perovskite films on graphene with density-controlled dislocations and confirm their negative impact.
url	https://doi.org/10.1038/s41467-019-12056-1
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Carrier lifetime enhancement in halide perovskite via remote epitaxy

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