Spontaneous current constriction in threshold switching devices
Today the phenomenon underlying threshold switching of Oxide-based resistive memories is an unresolved debate. Here, the authors report that the TaOx-based conductive filament formation, the current density and temperature are not-uniform distributions and electric field domains are not required.
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2019-04-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-019-09679-9 |