A Comparison Between GaAs Mesfet and Si NMOS ESD Behaviour
Work is in hand at Loughborough University to investigate and compare the ESD sensitivity of GaAs D-MESFETs and unprotected enhancement mode NMOS structures.
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
1987-01-01
|
| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1987/96107 |