On Physical Vapor Deposition of Organic Semiconductor CuPc Thin Films in High Gravity

• Main Authors: Kh.S. Karimov, S. Bellingeri, B.F. Irgaziev, H.B. Senin, I. Qazi, T.A. Khan, Y. Abe, U. Shafique
• Format: Article
• Language: English
• Published: al-Farabi Kazakh National University 2009-01-01
• Series: Eurasian Chemico-Technological Journal
• Online Access: http://ect-journal.kz/index.php/ectj/article/view/631

Thin organic films of p-type semiconductor copper phthalocyanine (CuPc, C32H16N8Cu) deposited by vacuum evaporation on glass substrates at different gravity conditions, from 50 g to –50 g (g – denotes the terrestrial gravity acceleration) in a centrifugal machine, were investigated. Thickness distribution of the film deposited was determined by measurement of absorbance using a scanning light beam probe. An anisotropic distribution of the film was observed in the direction of source and substrate rotation. The anisotropy is associated with centrifugal motion of the source-substrate system. In a direction perpendicular to the rotation, the deposition distribution was isotropic and obeyed, in principle, the theoretical approach which requires a maximum deposition in the centre of the sample. The experimentally observed influence of the acceleration on the deposition rate of the CuPc films on the substrate was simulated.