On Physical Vapor Deposition of Organic Semiconductor CuPc Thin Films in High Gravity
Thin organic films of p-type semiconductor copper phthalocyanine (CuPc, C32H16N8Cu) deposited by vacuum evaporation on glass substrates at different gravity conditions, from 50 g to –50 g (g – denotes the terrestrial gravity acceleration) in a centrifugal machine, were investigated. Thickness distri...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
al-Farabi Kazakh National University
2009-01-01
|
| Series: | Eurasian Chemico-Technological Journal |
| Online Access: | http://ect-journal.kz/index.php/ectj/article/view/631 |
| Summary: | Thin organic films of p-type semiconductor copper phthalocyanine (CuPc, C32H16N8Cu) deposited by vacuum evaporation on glass substrates at different gravity conditions, from 50 g to –50 g (g – denotes the terrestrial gravity acceleration) in a centrifugal machine, were investigated. Thickness distribution of the film deposited was determined by measurement of absorbance using a scanning light beam probe. An anisotropic distribution of the film was observed in the direction of source and substrate rotation. The anisotropy is associated with centrifugal motion of the source-substrate system. In a direction perpendicular to the rotation, the deposition distribution was isotropic and obeyed, in principle, the theoretical approach which requires a maximum deposition in the centre of the sample. The experimentally observed influence of the acceleration on the deposition rate of the CuPc films on the substrate was simulated. |
|---|---|
| ISSN: | 1562-3920 2522-4867 |