Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon

The present work is the study of the dark current density for porous silicon which is  prepared by photo-electrochemical etching for n-type silicon by using laser power density of (10mw/cm2)and wavelength(650nm)  under different anodization time(50,60)minute. ,The results obtained from this study sh...

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Main Authors: Ahmed Kh. AL-Kadumi, Alwan M. Alwan, Ali H. Al-Batat
Format: Article
Language:English
Published: University of Zakho 2013-09-01
Series:Science Journal of University of Zakho
Subjects:
The
Online Access:https://sjuoz.uoz.edu.krd/index.php/sjuoz/article/view/448
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spelling doaj-96f046ccaf4d453b87eeb3306a1015fe2020-11-24T21:00:32Zeng University of ZakhoScience Journal of University of Zakho2663-628X2663-62982013-09-0112874881448Theoretical and Empirical Comparison of Electrical Properties of Porous SiliconAhmed Kh. AL-Kadumi0Alwan M. Alwan1Ali H. Al-Batat2University of ZakhoAl-Technology UniversityAl-Mustansirya UniversityThe present work is the study of the dark current density for porous silicon which is  prepared by photo-electrochemical etching for n-type silicon by using laser power density of (10mw/cm2)and wavelength(650nm)  under different anodization time(50,60)minute. ,The results obtained from this study shows different characteristics that  of porous for the different porous Silicon layers. The empirical data of J-V characteristics are compared by using mathematical(a Poole-Frenkel-like, Schottky diode) models prepared the with assistance of Matlab program.https://sjuoz.uoz.edu.krd/index.php/sjuoz/article/view/448The
collection DOAJ
language English
format Article
sources DOAJ
author Ahmed Kh. AL-Kadumi
Alwan M. Alwan
Ali H. Al-Batat
spellingShingle Ahmed Kh. AL-Kadumi
Alwan M. Alwan
Ali H. Al-Batat
Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon
Science Journal of University of Zakho
The
author_facet Ahmed Kh. AL-Kadumi
Alwan M. Alwan
Ali H. Al-Batat
author_sort Ahmed Kh. AL-Kadumi
title Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon
title_short Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon
title_full Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon
title_fullStr Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon
title_full_unstemmed Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon
title_sort theoretical and empirical comparison of electrical properties of porous silicon
publisher University of Zakho
series Science Journal of University of Zakho
issn 2663-628X
2663-6298
publishDate 2013-09-01
description The present work is the study of the dark current density for porous silicon which is  prepared by photo-electrochemical etching for n-type silicon by using laser power density of (10mw/cm2)and wavelength(650nm)  under different anodization time(50,60)minute. ,The results obtained from this study shows different characteristics that  of porous for the different porous Silicon layers. The empirical data of J-V characteristics are compared by using mathematical(a Poole-Frenkel-like, Schottky diode) models prepared the with assistance of Matlab program.
topic The
url https://sjuoz.uoz.edu.krd/index.php/sjuoz/article/view/448
work_keys_str_mv AT ahmedkhalkadumi theoreticalandempiricalcomparisonofelectricalpropertiesofporoussilicon
AT alwanmalwan theoreticalandempiricalcomparisonofelectricalpropertiesofporoussilicon
AT alihalbatat theoreticalandempiricalcomparisonofelectricalpropertiesofporoussilicon
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