From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits

From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits

Colleagues and we recently proposed a new type of transistor, a Bilayer PseudoSpin Field Effect Transistor (BiSFET), based on many-body coherent states in coupled electron and hole layers in graphene. Here we review the basic BiSFET device concept and ongoing efforts to determine how such a device,...

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Main Authors: Leonard F. Register, Dipanjan Basu, Dharmendar Reddy
Format: Article
Language:English
Published: Hindawi Limited 2011-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2011/258731
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spelling doaj-969c3d37d0c248219e49a17346883ef62020-11-24T21:02:54ZengHindawi LimitedAdvances in Condensed Matter Physics1687-81081687-81242011-01-01201110.1155/2011/258731258731From Coherent States in Adjacent Graphene Layers toward Low-Power Logic CircuitsLeonard F. Register0Dipanjan Basu1Dharmendar Reddy2Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Building 160, Austin, TX, 78758, USADepartment of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Building 160, Austin, TX, 78758, USADepartment of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Building 160, Austin, TX, 78758, USAColleagues and we recently proposed a new type of transistor, a Bilayer PseudoSpin Field Effect Transistor (BiSFET), based on many-body coherent states in coupled electron and hole layers in graphene. Here we review the basic BiSFET device concept and ongoing efforts to determine how such a device, which would be far from a drop-in replacement for MOSFETs in CMOS logic, could be used for low-power logic operation, and to model the effects of engineerable device parameters on the formation and gating of interlayer coherent state.http://dx.doi.org/10.1155/2011/258731
collection DOAJ
language English
format Article
sources DOAJ
author Leonard F. Register
Dipanjan Basu
Dharmendar Reddy
spellingShingle Leonard F. Register
Dipanjan Basu
Dharmendar Reddy
From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits
Advances in Condensed Matter Physics
author_facet Leonard F. Register
Dipanjan Basu
Dharmendar Reddy
author_sort Leonard F. Register
title From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits
title_short From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits
title_full From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits
title_fullStr From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits
title_full_unstemmed From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits
title_sort from coherent states in adjacent graphene layers toward low-power logic circuits
publisher Hindawi Limited
series Advances in Condensed Matter Physics
issn 1687-8108
1687-8124
publishDate 2011-01-01
description Colleagues and we recently proposed a new type of transistor, a Bilayer PseudoSpin Field Effect Transistor (BiSFET), based on many-body coherent states in coupled electron and hole layers in graphene. Here we review the basic BiSFET device concept and ongoing efforts to determine how such a device, which would be far from a drop-in replacement for MOSFETs in CMOS logic, could be used for low-power logic operation, and to model the effects of engineerable device parameters on the formation and gating of interlayer coherent state.
url http://dx.doi.org/10.1155/2011/258731
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AT dipanjanbasu fromcoherentstatesinadjacentgraphenelayerstowardlowpowerlogiccircuits
AT dharmendarreddy fromcoherentstatesinadjacentgraphenelayerstowardlowpowerlogiccircuits
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