Study on Gas Sensing Performance of In2O3 Thick Film Resistors Prepared by Screen Printing Technique
Indium Oxide (In2O3) thick films were prepared on alumina substrate by using standard screen printing technique. These films were dried and fired at temperatures between 750 0C to 950 0C for two hours in air atmosphere. The compositional, morphological and structural properties of In2O3 films were p...
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IFSA Publishing, S.L.
2011-02-01
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Online Access: | http://www.sensorsportal.com/HTML/DIGEST/february_2011/P_763.pdf |
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doaj-96832426f3cc4a928532f8721c0078c12020-11-24T20:59:40ZengIFSA Publishing, S.L.Sensors & Transducers2306-85151726-54792011-02-011252194204Study on Gas Sensing Performance of In2O3 Thick Film Resistors Prepared by Screen Printing TechniqueS. C. KULKARNI0R. Y. BORSE1Department of physics, S.P.H. Mahila college, Malegaon-Camp 423105, Dist-Nashik, (M. S), IndiaThin and Thick film Laboratory, Dept. of Electronics M. S. G. College, Malegaon-Camp 423105, Dist- Nashik, (M.S), IndiaIndium Oxide (In2O3) thick films were prepared on alumina substrate by using standard screen printing technique. These films were dried and fired at temperatures between 750 0C to 950 0C for two hours in air atmosphere. The compositional, morphological and structural properties of In2O3 films were performed by Energy Dispersive Spectroscopy (EDX), XRD, and Scanning electron Microscopy respectively. We explore the various gases to study sensing performance of In2O3 thick films. The maximum response was reported to film fired at 750 0C for H2S gas at 150 0C operating temperature. http://www.sensorsportal.com/HTML/DIGEST/february_2011/P_763.pdfIn2O3thick filmsScreen printingH2S |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
S. C. KULKARNI R. Y. BORSE |
spellingShingle |
S. C. KULKARNI R. Y. BORSE Study on Gas Sensing Performance of In2O3 Thick Film Resistors Prepared by Screen Printing Technique Sensors & Transducers In2O3 thick films Screen printing H2S |
author_facet |
S. C. KULKARNI R. Y. BORSE |
author_sort |
S. C. KULKARNI |
title |
Study on Gas Sensing Performance of In2O3 Thick Film Resistors Prepared by Screen Printing Technique |
title_short |
Study on Gas Sensing Performance of In2O3 Thick Film Resistors Prepared by Screen Printing Technique |
title_full |
Study on Gas Sensing Performance of In2O3 Thick Film Resistors Prepared by Screen Printing Technique |
title_fullStr |
Study on Gas Sensing Performance of In2O3 Thick Film Resistors Prepared by Screen Printing Technique |
title_full_unstemmed |
Study on Gas Sensing Performance of In2O3 Thick Film Resistors Prepared by Screen Printing Technique |
title_sort |
study on gas sensing performance of in2o3 thick film resistors prepared by screen printing technique |
publisher |
IFSA Publishing, S.L. |
series |
Sensors & Transducers |
issn |
2306-8515 1726-5479 |
publishDate |
2011-02-01 |
description |
Indium Oxide (In2O3) thick films were prepared on alumina substrate by using standard screen printing technique. These films were dried and fired at temperatures between 750 0C to 950 0C for two hours in air atmosphere. The compositional, morphological and structural properties of In2O3 films were performed by Energy Dispersive Spectroscopy (EDX), XRD, and Scanning electron Microscopy respectively. We explore the various gases to study sensing performance of In2O3 thick films. The maximum response was reported to film fired at 750 0C for H2S gas at 150 0C operating temperature.
|
topic |
In2O3 thick films Screen printing H2S |
url |
http://www.sensorsportal.com/HTML/DIGEST/february_2011/P_763.pdf |
work_keys_str_mv |
AT sckulkarni studyongassensingperformanceofin2o3thickfilmresistorspreparedbyscreenprintingtechnique AT ryborse studyongassensingperformanceofin2o3thickfilmresistorspreparedbyscreenprintingtechnique |
_version_ |
1716781979287945216 |