Study on Gas Sensing Performance of In2O3 Thick Film Resistors Prepared by Screen Printing Technique
Indium Oxide (In2O3) thick films were prepared on alumina substrate by using standard screen printing technique. These films were dried and fired at temperatures between 750 0C to 950 0C for two hours in air atmosphere. The compositional, morphological and structural properties of In2O3 films were p...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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IFSA Publishing, S.L.
2011-02-01
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| Series: | Sensors & Transducers |
| Subjects: | |
| Online Access: | http://www.sensorsportal.com/HTML/DIGEST/february_2011/P_763.pdf |
| Summary: | Indium Oxide (In2O3) thick films were prepared on alumina substrate by using standard screen printing technique. These films were dried and fired at temperatures between 750 0C to 950 0C for two hours in air atmosphere. The compositional, morphological and structural properties of In2O3 films were performed by Energy Dispersive Spectroscopy (EDX), XRD, and Scanning electron Microscopy respectively. We explore the various gases to study sensing performance of In2O3 thick films. The maximum response was reported to film fired at 750 0C for H2S gas at 150 0C operating temperature.
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| ISSN: | 2306-8515 1726-5479 |