Structure of AlN films deposited by magnetron sputtering method

• Main Authors: Nowakowska-Langier K., Chodun R., Zdunek K., Minikayev R., Nietubyc R.
• Format: Article
• Language: English
• Published: Sciendo 2015-09-01
• Series: Materials Science-Poland
• Subjects: aln films; magnetron sputtering method; crystalline structure
• Online Access: https://doi.org/10.1515/msp-2015-0073

AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N2. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite) structure in which the crystallographic orientation depends on the gas mixture pressure.