Partial Isolation Type Buried Channel Array Transistor (Pi-BCAT) for a Sub-20 nm DRAM Cell Transistor

Partial Isolation Type Buried Channel Array Transistor (Pi-BCAT) for a Sub-20 nm DRAM Cell Transistor

In this paper, we propose a new buried channel array transistor structure to solve the problem of current leakage occurring in the capacitors of dynamic random-access memory (DRAM) cells. This structure has a superior off current performance compared with three previous types of structures. In parti...

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Bibliographic Details
Main Authors: Jin-sung Lee, Jin-hyo Park, Geon Kim, Hyun Duck Choi, Myoung Jin Lee
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Electronics
Subjects:
gate induced drain leakage (GIDL)
buried channel array transistor (BCAT)
on current (i<sub>on</sub>)
off current (i<sub>off</sub>)
potential drop width (pdw)
asymmetric doping structure
Online Access:https://www.mdpi.com/2079-9292/9/11/1908

Internet

https://www.mdpi.com/2079-9292/9/11/1908

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