Photodiode based on GaP sensitized to short-wave region of UV spectrum
An algorithm for the simulation and analysis of the parameters that determine the sensitivity of the photodiode surface-barrier structures based on n+—n-GaP—SnO2(F) has been developed. It has been shown that the monochromatic current sensitivity to radiation at wavelength of 250 nm in such a structu...
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| Format: | Article |
| Language: | English |
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Politehperiodika
2012-10-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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| Online Access: | http://www.tkea.com.ua/tkea/2012/5_2012/pdf/07.zip |