Photodiode based on GaP sensitized to short-wave region of UV spectrum
An algorithm for the simulation and analysis of the parameters that determine the sensitivity of the photodiode surface-barrier structures based on n+—n-GaP—SnO2(F) has been developed. It has been shown that the monochromatic current sensitivity to radiation at wavelength of 250 nm in such a structu...
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| Format: | Article |
| Language: | English |
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Politehperiodika
2012-10-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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| Online Access: | http://www.tkea.com.ua/tkea/2012/5_2012/pdf/07.zip |
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Article |
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doaj-959543df465048e7abc0bd5ba4201f782020-11-25T00:02:16ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182012-10-0153134Photodiode based on GaP sensitized to short-wave region of UV spectrumDobrovol’skii Yu. G.An algorithm for the simulation and analysis of the parameters that determine the sensitivity of the photodiode surface-barrier structures based on n+—n-GaP—SnO2(F) has been developed. It has been shown that the monochromatic current sensitivity to radiation at wavelength of 250 nm in such a structure can reach 0,1—0,12 A/W.http://www.tkea.com.ua/tkea/2012/5_2012/pdf/07.zipphotodiodegallium phosphidecomputer designsensitivity |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Dobrovol’skii Yu. G. |
| spellingShingle |
Dobrovol’skii Yu. G. Photodiode based on GaP sensitized to short-wave region of UV spectrum Tekhnologiya i Konstruirovanie v Elektronnoi Apparature photodiode gallium phosphide computer design sensitivity |
| author_facet |
Dobrovol’skii Yu. G. |
| author_sort |
Dobrovol’skii Yu. G. |
| title |
Photodiode based on GaP sensitized to short-wave region of UV spectrum |
| title_short |
Photodiode based on GaP sensitized to short-wave region of UV spectrum |
| title_full |
Photodiode based on GaP sensitized to short-wave region of UV spectrum |
| title_fullStr |
Photodiode based on GaP sensitized to short-wave region of UV spectrum |
| title_full_unstemmed |
Photodiode based on GaP sensitized to short-wave region of UV spectrum |
| title_sort |
photodiode based on gap sensitized to short-wave region of uv spectrum |
| publisher |
Politehperiodika |
| series |
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| issn |
2225-5818 |
| publishDate |
2012-10-01 |
| description |
An algorithm for the simulation and analysis of the parameters that determine the sensitivity of the photodiode surface-barrier structures based on n+—n-GaP—SnO2(F) has been developed. It has been shown that the monochromatic current sensitivity to radiation at wavelength of 250 nm in such a structure can reach 0,1—0,12 A/W. |
| topic |
photodiode gallium phosphide computer design sensitivity |
| url |
http://www.tkea.com.ua/tkea/2012/5_2012/pdf/07.zip |
| work_keys_str_mv |
AT dobrovolskiiyug photodiodebasedongapsensitizedtoshortwaveregionofuvspectrum |
| _version_ |
1725438566942638080 |