Photodiode based on GaP sensitized to short-wave region of UV spectrum
An algorithm for the simulation and analysis of the parameters that determine the sensitivity of the photodiode surface-barrier structures based on n+—n-GaP—SnO2(F) has been developed. It has been shown that the monochromatic current sensitivity to radiation at wavelength of 250 nm in such a structu...
Main Author: | |
---|---|
Format: | Article |
Language: | English |
Published: |
Politehperiodika
2012-10-01
|
Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
Subjects: | |
Online Access: | http://www.tkea.com.ua/tkea/2012/5_2012/pdf/07.zip |
Summary: | An algorithm for the simulation and analysis of the parameters that determine the sensitivity of the photodiode surface-barrier structures based on n+—n-GaP—SnO2(F) has been developed. It has been shown that the monochromatic current sensitivity to radiation at wavelength of 250 nm in such a structure can reach 0,1—0,12 A/W. |
---|---|
ISSN: | 2225-5818 |