Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs With Atomic Layer Deposited Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Stacked Insulators

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs With Atomic Layer Deposited Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Stacked Insulators

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) were fabricated with an atomic-layer-deposited (ALD) SiO<sub>2</sub> buffer layer between the a-IGZO channel and the Al<sub>2</sub>O<sub>3</sub> dielectric. Compared with the TFTs with a single Al<sub&g...

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Bibliographic Details
Main Authors: Li-Li Zheng, Shi-Bing Qian, You-Hang Wang, Wen-Jun Liu, Shi-Jin Ding
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Amorphous In-Ga-Zn-O
thin-film transistor
SiO2 buffer layer
negative gate bias stress
Online Access:https://ieeexplore.ieee.org/document/7482673/

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