Layer Transfer from Chemically Etched 150 mm Porous Si Substrates

Layer Transfer from Chemically Etched 150 mm Porous Si Substrates

We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface conditioning for all Si layer transfer processes based on porous Si has been, up to n...

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Bibliographic Details
Main Authors: Rolf Brendel, Heiko Plagwitz, Andreas Wolf, Renate Horbelt, Jan Hensen, Barbara Terheiden
Format: Article
Language:English
Published: MDPI AG 2011-05-01
Series:Materials
Subjects:
layer transfer process
porous silicon
stain etching
Online Access:http://www.mdpi.com/1996-1944/4/5/941/

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