Layer Transfer from Chemically Etched 150 mm Porous Si Substrates
We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface conditioning for all Si layer transfer processes based on porous Si has been, up to n...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2011-05-01
|
| Series: | Materials |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1996-1944/4/5/941/ |