LOW-TEMPERATURE GRAPHENE GROWTH ON COPPER FOIL CATALYST BY CHEMICAL VAPOUR DEPOSITION (CVD) METHOD

• Main Author: Kasman Kasman
• Format: Article
• Language: Indonesian
• Published: Universitas Negeri Makassar 2016-08-01
• Series: Scientific Pinisi
• Online Access: http://ojs.unm.ac.id/index.php/pinisi/article/view/2130

<p>Graphene growth at low temperatures (below 500^oC) on copper catalyst by CVD method was studied. The goal of this study is to determine a minimum growth temperature for growing graphene with high quality. In this study, the catalyst used for growing graphene was copper foil (Sigma-Aldrich, code: 1001328641, 25 µm in thickness, 99.98% trace metals basis, cut into 2x1 cm²in size)  annealed at 900^oC , while the precursor used was poly(methyl methacrylate) (PMMA) heated at 140 ^oC. In graphene growth, two different growth temperatures of 350 ^oC and 450 ^oC were varied. The graphene films grown on copper foil catalyst were characterised using SEM and Raman spectroscopy. While, the films transferred onto quartz/glass/grid substrates were characterised by using SEM, Raman spectroscopy, UV-vis spectroscopy, four point probe and TEM. Results of this study showed that the 450 ^oC-grown samples produce a better quality graphene film compared to the 350 ^oC-grown samples. In other words, the minimum temperature of graphene growth is at least 450^oC for a Cu foil, since this temperature has to be sufficiently high to activate carbon diffusion and rearrangement on the catalyst surface..</p>