Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures

Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures

In this paper, we report on an interface dipole modulation (IDM) loss occurring in HfO2/atomically thin TiO2/SiO2 stack structures prepared by atomic layer deposition (ALD). The IDM characteristic, which is observed as a capacitance–voltage (C–V) hysteresis curve, disappears when the temperature dur...

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Bibliographic Details
Main Authors: Shutaro Asanuma, Kyoko Sumita, Yusuke Miyaguchi, Kazumasa Horita, Takehito Jimbo, Kazuya Saito, Noriyuki Miyata
Format: Article
Language:English
Published: AIP Publishing LLC 2020-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0015348

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