Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures

Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures

In this paper, we report on an interface dipole modulation (IDM) loss occurring in HfO2/atomically thin TiO2/SiO2 stack structures prepared by atomic layer deposition (ALD). The IDM characteristic, which is observed as a capacitance–voltage (C–V) hysteresis curve, disappears when the temperature dur...

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Main Authors: Shutaro Asanuma, Kyoko Sumita, Yusuke Miyaguchi, Kazumasa Horita, Takehito Jimbo, Kazuya Saito, Noriyuki Miyata
Format: Article
Language:English
Published: AIP Publishing LLC 2020-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0015348
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spelling doaj-9410cde437f6408382a7fe2082e983f92020-11-25T02:30:43ZengAIP Publishing LLCAIP Advances2158-32262020-08-01108085114085114-510.1063/5.0015348Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structuresShutaro Asanuma0Kyoko Sumita1Yusuke Miyaguchi2Kazumasa Horita3Takehito Jimbo4Kazuya Saito5Noriyuki Miyata6National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, JapanNational Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, JapanInstitute of Semiconductor and Electronics Technologies, ULVAC, Inc., Suyama, Susono 410-1231, JapanInstitute of Semiconductor and Electronics Technologies, ULVAC, Inc., Suyama, Susono 410-1231, JapanInstitute of Semiconductor and Electronics Technologies, ULVAC, Inc., Suyama, Susono 410-1231, JapanInstitute of Semiconductor and Electronics Technologies, ULVAC, Inc., Suyama, Susono 410-1231, JapanNational Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, JapanIn this paper, we report on an interface dipole modulation (IDM) loss occurring in HfO2/atomically thin TiO2/SiO2 stack structures prepared by atomic layer deposition (ALD). The IDM characteristic, which is observed as a capacitance–voltage (C–V) hysteresis curve, disappears when the temperature during ALD or post-deposition annealing exceeds its respective critical temperatures, even though the HfO2/SiO2 stack structure is maintained. We found a correlation between Ti suboxide formation and IDM loss and speculated the effect of impurities and defects introduced during the ALD process on IDM operation.http://dx.doi.org/10.1063/5.0015348
collection DOAJ
language English
format Article
sources DOAJ
author Shutaro Asanuma
Kyoko Sumita
Yusuke Miyaguchi
Kazumasa Horita
Takehito Jimbo
Kazuya Saito
Noriyuki Miyata
spellingShingle Shutaro Asanuma
Kyoko Sumita
Yusuke Miyaguchi
Kazumasa Horita
Takehito Jimbo
Kazuya Saito
Noriyuki Miyata
Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures
AIP Advances
author_facet Shutaro Asanuma
Kyoko Sumita
Yusuke Miyaguchi
Kazumasa Horita
Takehito Jimbo
Kazuya Saito
Noriyuki Miyata
author_sort Shutaro Asanuma
title Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures
title_short Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures
title_full Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures
title_fullStr Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures
title_full_unstemmed Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures
title_sort thermal stability of interface dipole modulation in atomic layer-deposited hfo2/sio2 multi-stack structures
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2020-08-01
description In this paper, we report on an interface dipole modulation (IDM) loss occurring in HfO2/atomically thin TiO2/SiO2 stack structures prepared by atomic layer deposition (ALD). The IDM characteristic, which is observed as a capacitance–voltage (C–V) hysteresis curve, disappears when the temperature during ALD or post-deposition annealing exceeds its respective critical temperatures, even though the HfO2/SiO2 stack structure is maintained. We found a correlation between Ti suboxide formation and IDM loss and speculated the effect of impurities and defects introduced during the ALD process on IDM operation.
url http://dx.doi.org/10.1063/5.0015348
work_keys_str_mv AT shutaroasanuma thermalstabilityofinterfacedipolemodulationinatomiclayerdepositedhfo2sio2multistackstructures
AT kyokosumita thermalstabilityofinterfacedipolemodulationinatomiclayerdepositedhfo2sio2multistackstructures
AT yusukemiyaguchi thermalstabilityofinterfacedipolemodulationinatomiclayerdepositedhfo2sio2multistackstructures
AT kazumasahorita thermalstabilityofinterfacedipolemodulationinatomiclayerdepositedhfo2sio2multistackstructures
AT takehitojimbo thermalstabilityofinterfacedipolemodulationinatomiclayerdepositedhfo2sio2multistackstructures
AT kazuyasaito thermalstabilityofinterfacedipolemodulationinatomiclayerdepositedhfo2sio2multistackstructures
AT noriyukimiyata thermalstabilityofinterfacedipolemodulationinatomiclayerdepositedhfo2sio2multistackstructures
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