Effect of hydrogen passivation on the decoupling of graphene on SiC(0001) substrate: First-principles calculations

• Main Authors: Kang Liu, Pinglan Yan, Jin Li, Chaoyu He, Tao Ouyang, Chunxiao Zhang, Chao Tang, Jianxin Zhong
• Format: Article
• Language: English
• Published: Nature Publishing Group 2017-08-01
• Series: Scientific Reports
• Online Access: https://doi.org/10.1038/s41598-017-09161-w

Abstract Intercalation of hydrogen is important for understanding the decoupling of graphene from SiC(0001) substrate. Employing first-principles calculations, we have systematically studied the decoupling of graphene from SiC surface by H atoms intercalation from graphene boundary. It is found the passivation of H atoms on both graphene edge and SiC substrate is the key factor of the decoupling process. Passivation of graphene edge can weaken the interaction between graphene boundary and the substrate, which reduced the energy barrier significantly for H diffusion into the graphene-SiC interface. As more and more H atoms diffuse into the interface and saturate the Si dangling bonds around the boundary, graphene will detach from substrate. Furthermore, the energy barriers in these processes are relatively low, indicating that these processes can occur under the experimental temperature.