Tunable carbon nanotube diode with varying asymmetric geometry

We propose and demonstrate a carbon nanotube (CNT)-based field emission nanoscale diode to realize a fully integrated nanoscale system, namely, a true nanosystem. To the best of our knowledge, this is the first time a nanodiode simultaneously achieves ease of fabrication and individual tunability of...

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Main Authors: Keita Funayama, Jun Hirotani, Atsushi Miura, Hiroya Tanaka, Yutaka Ohno, Yukihiro Tadokoro
Format: Article
Language:English
Published: AIP Publishing LLC 2021-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0058300
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spelling doaj-93f27baf5112423ebd60f6ea7a77ca132021-08-04T13:18:52ZengAIP Publishing LLCAIP Advances2158-32262021-07-01117075212075212-610.1063/5.0058300Tunable carbon nanotube diode with varying asymmetric geometryKeita Funayama0Jun Hirotani1Atsushi Miura2Hiroya Tanaka3Yutaka Ohno4Yukihiro Tadokoro5Toyota Central Research and Development Laboratories, Inc., Nagakute 480-1192, JapanDepartment of Electronics, Nagoya University, Nagoya 464-8603, JapanToyota Central Research and Development Laboratories, Inc., Nagakute 480-1192, JapanToyota Central Research and Development Laboratories, Inc., Nagakute 480-1192, JapanDepartment of Electronics, Nagoya University, Nagoya 464-8603, JapanToyota Central Research and Development Laboratories, Inc., Nagakute 480-1192, JapanWe propose and demonstrate a carbon nanotube (CNT)-based field emission nanoscale diode to realize a fully integrated nanoscale system, namely, a true nanosystem. To the best of our knowledge, this is the first time a nanodiode simultaneously achieves ease of fabrication and individual tunability of multiple CNT diodes on the nanoscale on the same substrate in a one-time process. A nanodiode comprises a single-wall CNT cathode placed on a substrate, layered insulator, and metal anode. The proposed nanodiode allows us to adjust the turn-on voltage from 1 to 2.4 V by varying the surface area of the anode. Furthermore, as an example of a basic nano-electronic system, nanodiode-based fundamental logic gates (OR and NAND) are demonstrated on a CNT. We propose a theoretical model that derives the theoretical I–V characteristics based on the image-charge method to design the nanodiode quickly. The results in this study contribute to the development of carbon-based nanoelectronic systems.http://dx.doi.org/10.1063/5.0058300
collection DOAJ
language English
format Article
sources DOAJ
author Keita Funayama
Jun Hirotani
Atsushi Miura
Hiroya Tanaka
Yutaka Ohno
Yukihiro Tadokoro
spellingShingle Keita Funayama
Jun Hirotani
Atsushi Miura
Hiroya Tanaka
Yutaka Ohno
Yukihiro Tadokoro
Tunable carbon nanotube diode with varying asymmetric geometry
AIP Advances
author_facet Keita Funayama
Jun Hirotani
Atsushi Miura
Hiroya Tanaka
Yutaka Ohno
Yukihiro Tadokoro
author_sort Keita Funayama
title Tunable carbon nanotube diode with varying asymmetric geometry
title_short Tunable carbon nanotube diode with varying asymmetric geometry
title_full Tunable carbon nanotube diode with varying asymmetric geometry
title_fullStr Tunable carbon nanotube diode with varying asymmetric geometry
title_full_unstemmed Tunable carbon nanotube diode with varying asymmetric geometry
title_sort tunable carbon nanotube diode with varying asymmetric geometry
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2021-07-01
description We propose and demonstrate a carbon nanotube (CNT)-based field emission nanoscale diode to realize a fully integrated nanoscale system, namely, a true nanosystem. To the best of our knowledge, this is the first time a nanodiode simultaneously achieves ease of fabrication and individual tunability of multiple CNT diodes on the nanoscale on the same substrate in a one-time process. A nanodiode comprises a single-wall CNT cathode placed on a substrate, layered insulator, and metal anode. The proposed nanodiode allows us to adjust the turn-on voltage from 1 to 2.4 V by varying the surface area of the anode. Furthermore, as an example of a basic nano-electronic system, nanodiode-based fundamental logic gates (OR and NAND) are demonstrated on a CNT. We propose a theoretical model that derives the theoretical I–V characteristics based on the image-charge method to design the nanodiode quickly. The results in this study contribute to the development of carbon-based nanoelectronic systems.
url http://dx.doi.org/10.1063/5.0058300
work_keys_str_mv AT keitafunayama tunablecarbonnanotubediodewithvaryingasymmetricgeometry
AT junhirotani tunablecarbonnanotubediodewithvaryingasymmetricgeometry
AT atsushimiura tunablecarbonnanotubediodewithvaryingasymmetricgeometry
AT hiroyatanaka tunablecarbonnanotubediodewithvaryingasymmetricgeometry
AT yutakaohno tunablecarbonnanotubediodewithvaryingasymmetricgeometry
AT yukihirotadokoro tunablecarbonnanotubediodewithvaryingasymmetricgeometry
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